Raman and interband optical spectra of epitaxial layers of the
topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates

J 2014

Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates

HUMLÍČEK, Josef; Dušan HEMZAL; Adam DUBROKA; Ondřej CAHA; Hubert STEINER et. al.

Základní údaje

Originální název

Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates

Název česky

Ramanská a mezipásová optická spektra epitaxních vrstev topologických izolátorů Bi2Te3 a Bi2Se3 na substrátech BaF2

Autoři

HUMLÍČEK, Josef; Dušan HEMZAL; Adam DUBROKA; Ondřej CAHA; Hubert STEINER; Gunther BAUER a Guenther SPRINGHOLZ

Vydání

Physica Scripta, Bristol (England), Royal Swedish Academy of Sciences, 2014, 0031-8949

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.126

Kód RIV

RIV/00216224:14740/14:00074283

Organizační jednotka

Středoevropský technologický institut

DOI

https://doi.org/10.1088/0031-8949/2014/T162/014007

UT WoS

000349832200008

EID Scopus

2-s2.0-84907291959

Klíčová slova anglicky

bismuth tellurides; bismuth selenides; Raman spectra; ellipsometric spectra; epitaxial layers

Štítky

kontrola MP, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 3. 2018 16:09, doc. Mgr. Adam Dubroka, Ph.D.

Anotace

ORIG CZ

V originále

We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range.

Česky

Návaznosti

ED1.1.00/02.0068, projekt VaV

Název: CEITEC - central european institute of technology

GAP204/12/0595, projekt VaV

Název: Elektronové a strukturní vlastnosti trojrozměrných topologických izolantů

Investor: Grantová agentura ČR, Elektronové a strukturní vlastnosti trojrozměrných topologických izolantů

Citovat

HUMLÍČEK, Josef; Dušan HEMZAL; Adam DUBROKA; Ondřej CAHA; Hubert STEINER; Gunther BAUER a Guenther SPRINGHOLZ. Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates. Physica Scripta. Bristol (England): Royal Swedish Academy of Sciences, 2014, T162, September, s. "nestránkováno", 4 s. ISSN 0031-8949. Dostupné z: https://doi.org/10.1088/0031-8949/2014/T162/014007.

@article{1215247,
   author = {Humlíček, Josef and Hemzal, Dušan and Dubroka, Adam and Caha, Ondřej and Steiner, Hubert and Bauer, Gunther and Springholz, Guenther},
   article_location = {Bristol (England)},
   article_number = {September},
   doi = {https://doi.org/10.1088/0031-8949/2014/T162/014007},
   keywords = {bismuth tellurides; bismuth selenides; Raman spectra; ellipsometric spectra; epitaxial layers},
   language = {eng},
   issn = {0031-8949},
   journal = {Physica Scripta},
   title = {Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates},
   url = {http://iopscience.iop.org/1402-4896/2014/T162/014007/article},
   volume = {T162},
   year = {2014}
}

TY  - JOUR
ID  - 1215247
AU  - Humlíček, Josef - Hemzal, Dušan - Dubroka, Adam - Caha, Ondřej - Steiner, Hubert - Bauer, Gunther - Springholz, Guenther
PY  - 2014
TI  - Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates
JF  - Physica Scripta
VL  - T162
IS  - September
SP  - "nestránkováno"
EP  - "nestránkováno"
PB  - Royal Swedish Academy of Sciences
SN  - 00318949
KW  - bismuth tellurides
KW  - bismuth selenides
KW  - Raman spectra
KW  - ellipsometric spectra
KW  - epitaxial layers
UR  - http://iopscience.iop.org/1402-4896/2014/T162/014007/article
L2  - http://iopscience.iop.org/1402-4896/2014/T162/014007/article
N2  - We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range.
ER  -

HUMLÍČEK, Josef; Dušan HEMZAL; Adam DUBROKA; Ondřej CAHA; Hubert STEINER; Gunther BAUER a Guenther SPRINGHOLZ. Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates. \textit{Physica Scripta}. Bristol (England): Royal Swedish Academy of Sciences, 2014, T162, September, s.~''nestránkováno'', 4 s. ISSN~0031-8949. Dostupné z: https://doi.org/10.1088/0031-8949/2014/T162/014007.

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