Modification of (111) and (100) silicon in atmospheric pressure
plasma

J 2014

Modification of (111) and (100) silicon in atmospheric pressure plasma

SKÁCELOVÁ, Dana; Monika STUPAVSKÁ; Pavel SŤAHEL a Mirko ČERNÁK

Základní údaje

Originální název

Modification of (111) and (100) silicon in atmospheric pressure plasma

Autoři

SKÁCELOVÁ, Dana; Monika STUPAVSKÁ; Pavel SŤAHEL a Mirko ČERNÁK

Vydání

Applied Surface Science, Elsevier Science, 2014, 0169-4332

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.711

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/14:00078284

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Atmospheric pressure plasma; DCSBD; Crystalline silicon wafer; Plasma activation; Plasma roughening; Wettability

Štítky

AKR, rivok

Změněno: 25. 7. 2025 13:15, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

In this paper the effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface, (1 0 0) plane and (1 1 1) plane is studied. Plasma treatment was realized in atmospheric pressure plasma generated by diffuse coplanar surface barrier discharge in ambient air. The changes of surface morphology, wettability and chemical structure were investigated by means of the AFM measurement, contact angle measurement and XPS, respectively. It was proved that plasma roughening of c-Si depends on the crystallographic orientation. The wettability of c-Si after plasma treatment was improved independently on the orientation however oxidation of Si surface was also observed. (C) 2014 Elsevier B.V. All rights reserved.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

EE2.3.30.0009, projekt VaV

Název: Zaměstnáním čerstvých absolventů doktorského studia k vědecké excelenci

Citovat

SKÁCELOVÁ, Dana; Monika STUPAVSKÁ; Pavel SŤAHEL a Mirko ČERNÁK. Modification of (111) and (100) silicon in atmospheric pressure plasma. Applied Surface Science. Elsevier Science, 2014, roč. 312, SEPTEMBER, s. 203-207. ISSN 0169-4332. Dostupné z: https://doi.org/10.1016/j.apsusc.2014.05.196.

@article{1216357,
   author = {Skácelová, Dana and Stupavská, Monika and Sťahel, Pavel and Černák, Mirko},
   article_number = {SEPTEMBER},
   doi = {https://doi.org/10.1016/j.apsusc.2014.05.196},
   keywords = {Atmospheric pressure plasma; DCSBD; Crystalline silicon wafer; Plasma activation; Plasma roughening; Wettability},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Modification of (111) and (100) silicon in atmospheric pressure plasma},
   url = {http://www.sciencedirect.com/science/article/pii/S0169433214009726#},
   volume = {312},
   year = {2014}
}

TY  - JOUR
ID  - 1216357
AU  - Skácelová, Dana - Stupavská, Monika - Sťahel, Pavel - Černák, Mirko
PY  - 2014
TI  - Modification of (111) and (100) silicon in atmospheric pressure plasma
JF  - Applied Surface Science
VL  - 312
IS  - SEPTEMBER
SP  - 203-207
EP  - 203-207
PB  - Elsevier Science
SN  - 01694332
KW  - Atmospheric pressure plasma
KW  - DCSBD
KW  - Crystalline silicon wafer
KW  - Plasma activation
KW  - Plasma roughening
KW  - Wettability
UR  - http://www.sciencedirect.com/science/article/pii/S0169433214009726#
N2  - In this paper the effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface, (1 0 0) plane and (1 1 1) plane is studied. Plasma treatment was realized in atmospheric pressure plasma generated by diffuse coplanar surface barrier discharge in ambient air. The changes of surface morphology, wettability and chemical structure were investigated by means of the AFM measurement, contact angle measurement and XPS, respectively. It was proved that plasma roughening of c-Si depends on the crystallographic orientation. The wettability of c-Si after plasma treatment was improved independently on the orientation however oxidation of Si surface was also observed. (C) 2014 Elsevier B.V. All rights reserved.
ER  -

SKÁCELOVÁ, Dana; Monika STUPAVSKÁ; Pavel SŤAHEL a Mirko ČERNÁK. Modification of (111) and (100) silicon in atmospheric pressure plasma. \textit{Applied Surface Science}. Elsevier Science, 2014, roč.~312, SEPTEMBER, s.~203-207. ISSN~0169-4332. Dostupné z: https://doi.org/10.1016/j.apsusc.2014.05.196.

Přehled o publikaci