Laser desorption ionization time-of-flight mass spectrometry of
Ge-As-Te chalcogenides

J 2015

Laser desorption ionization time-of-flight mass spectrometry of Ge-As-Te chalcogenides

ŠÚTOROVÁ, Katarína; Petra HAWLOVÁ; Lubomír PROKEŠ; Petr NĚMEC; Rémi BOIDIN et al.

Základní údaje

Originální název

Laser desorption ionization time-of-flight mass spectrometry of Ge-As-Te chalcogenides

Autoři

ŠÚTOROVÁ, Katarína; Petra HAWLOVÁ; Lubomír PROKEŠ; Petr NĚMEC; Rémi BOIDIN a Josef HAVEL

Vydání

Rapid Commun. Mass Spectrom, Wiley, 2015, 0951-4198

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10406 Analytical chemistry

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.226

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/15:00080662

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

LDI TOF MS; chalcogenides; Ge; As; Te; SEM; EDX; Raman

Štítky

AKR, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 14. 6. 2016 10:40, Mgr. Katarína Šútorová, Ph.D.

Anotace

V originále

GexAsyTez glasses have a broad window of optical transparency and high refractive index which make them promising for applications in the infrared region. The aim of this work is to reveal structural motifs which could be present during the fabrication of Ge-As-Te thin films by plasma deposition techniques; such knowledge is important for the optimization of thin film growth. Methods Mass spectra were acquired using a laser desorption ionization time-of-flight (LDI-TOF) mass spectrometer equipped with a nitrogen laser (337 nm) coupled with a quadrupole ion trap, and recorded in positive and negative ion reflectron modes. XRD, SEM (EDX) and Raman spectroscopy were also used for the characterization of Ge-As-Te bulk or powdered samples. Results Bulk GexAsyTez samples (x = 10–20%, y = 20–60%, z = 30–70%) were synthesized. LDI-MS of Ge-As-Te powders provided evidence for the formation of both positively and negatively charged clusters, whose stoichiometry was determined as Ten+/– (n = 1–4), Te5+, binary AsTen+/– (n = 1–3), GeTen+/– (n = 1–3), As2Te+/–, As2Te3+, As3Te+, AsTe4+, Ge2H6+/–, ternary GeAsTe+, GeAsTe2+/–, GeAsH5+, GeAsH6+, GeAsH12+, and tertiary GeAsTeH5–, GeAsTeH8–, GeAsTe2H3+/–. Conclusions The local structure of GexAsyTez materials is at least partly different from that of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis. However, LDI-TOFMS was found to be a suitable technique for the partial structure characterization of Ge-As-Te bulk samples and especially for the identification of the structural motifs present in the plasma during the preparation of the corresponding thin films.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

GA13-05082S, projekt VaV

Název: Analýza a aplikace plazmatických procesů pro přípravu tenkých vrstev amorfních chalkogenidů

Investor: Grantová agentura ČR, Analýza a aplikace plazmatických procesů pro přípravu tenkých vrstev amorfních chalkogenidů

Citovat

ŠÚTOROVÁ, Katarína; Petra HAWLOVÁ; Lubomír PROKEŠ; Petr NĚMEC; Rémi BOIDIN a Josef HAVEL. Laser desorption ionization time-of-flight mass spectrometry of Ge-As-Te chalcogenides. Rapid Commun. Mass Spectrom. Wiley, 2015, roč. 29, č. 5, s. 408-414. ISSN 0951-4198. Dostupné z: https://doi.org/10.1002/rcm.7120.

@article{1220073,
   author = {Šútorová, Katarína and Hawlová, Petra and Prokeš, Lubomír and Němec, Petr and Boidin, Rémi and Havel, Josef},
   article_number = {5},
   doi = {https://doi.org/10.1002/rcm.7120},
   keywords = {LDI TOF MS; chalcogenides; Ge; As; Te; SEM; EDX; Raman},
   language = {eng},
   issn = {0951-4198},
   journal = {Rapid Commun. Mass Spectrom},
   title = {Laser desorption ionization time-of-flight mass spectrometry of Ge-As-Te chalcogenides},
   url = {http://onlinelibrary.wiley.com/doi/10.1002/rcm.7120/abstract},
   volume = {29},
   year = {2015}
}

TY  - JOUR
ID  - 1220073
AU  - Šútorová, Katarína - Hawlová, Petra - Prokeš, Lubomír - Němec, Petr - Boidin, Rémi - Havel, Josef
PY  - 2015
TI  - Laser desorption ionization time-of-flight mass spectrometry of Ge-As-Te chalcogenides
JF  - Rapid Commun. Mass Spectrom
VL  - 29
IS  - 5
SP  - 408-414
EP  - 408-414
PB  - Wiley
SN  - 09514198
KW  - LDI TOF MS
KW  - chalcogenides
KW  - Ge
KW  - As
KW  - Te
KW  - SEM
KW  - EDX
KW  - Raman
UR  - http://onlinelibrary.wiley.com/doi/10.1002/rcm.7120/abstract
L2  - http://onlinelibrary.wiley.com/doi/10.1002/rcm.7120/abstract
N2  - GexAsyTez glasses have a broad window of optical transparency and high refractive index which make them promising for applications in the infrared region. The aim of this work is to reveal structural motifs which could be present during the fabrication of Ge-As-Te thin films by plasma deposition techniques; such knowledge is important for the optimization of thin film growth. Methods Mass spectra were acquired using a laser desorption ionization time-of-flight (LDI-TOF) mass spectrometer equipped with a nitrogen laser (337 nm) coupled with a quadrupole ion trap, and recorded in positive and negative ion reflectron modes. XRD, SEM (EDX) and Raman spectroscopy were also used for the characterization of Ge-As-Te bulk or powdered samples. Results Bulk GexAsyTez samples (x = 10–20%, y = 20–60%, z = 30–70%) were synthesized. LDI-MS of Ge-As-Te powders provided evidence for the formation of both positively and negatively charged clusters, whose stoichiometry was determined as Ten+/– (n = 1–4), Te5+, binary AsTen+/– (n = 1–3), GeTen+/– (n = 1–3), As2Te+/–, As2Te3+, As3Te+, AsTe4+, Ge2H6+/–, ternary GeAsTe+, GeAsTe2+/–, GeAsH5+, GeAsH6+, GeAsH12+, and tertiary GeAsTeH5–, GeAsTeH8–, GeAsTe2H3+/–. Conclusions The local structure of GexAsyTez materials is at least partly different from that of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis. However, LDI-TOFMS was found to be a suitable technique for the partial structure characterization of Ge-As-Te bulk samples and especially for the identification of the structural motifs present in the plasma during the preparation of the corresponding thin films.
ER  -

ŠÚTOROVÁ, Katarína; Petra HAWLOVÁ; Lubomír PROKEŠ; Petr NĚMEC; Rémi BOIDIN a Josef HAVEL. Laser desorption ionization time-of-flight mass spectrometry of Ge-As-Te chalcogenides. \textit{Rapid Commun. Mass Spectrom}. Wiley, 2015, roč.~29, č.~5, s.~408-414. ISSN~0951-4198. Dostupné z: https://doi.org/10.1002/rcm.7120.

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