| SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER a Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. Open Chemistry. Varšava, Polsko: De Gruyter, 2015, roč. 13, č. 1, s. 376-381. ISSN 2391-5420. Dostupné z: https://dx.doi.org/10.1515/chem-2015-0047. |
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@article{1220336,
author = {Skácelová, Dana and Sládek, Petr and Sťahel, Pavel and Pawera, Lukáš and Haničinec, Martin and Meischner, Jürgen and Černák, Mirko},
article_location = {Varšava, Polsko},
article_number = {1},
doi = {http://dx.doi.org/10.1515/chem-2015-0047},
keywords = {Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD},
language = {eng},
issn = {2391-5420},
journal = {Open Chemistry},
title = {Properties of atmospheric pressure plasma oxidized layers on silicon wafers},
volume = {13},
year = {2015}
}
TY - JOUR
ID - 1220336
AU - Skácelová, Dana - Sládek, Petr - Sťahel, Pavel - Pawera, Lukáš - Haničinec, Martin - Meischner, Jürgen - Černák, Mirko
PY - 2015
TI - Properties of atmospheric pressure plasma oxidized layers on silicon wafers
JF - Open Chemistry
VL - 13
IS - 1
SP - 376-381
EP - 376-381
PB - De Gruyter
SN - 23915420
KW - Amorphous silicon oxide
KW - atmospheric pressure plasma
KW - oxidation
KW - DCSBD
N2 - In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
ER -
SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER a Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. \textit{Open Chemistry}. Varšava, Polsko: De Gruyter, 2015, roč.~13, č.~1, s.~376-381. ISSN~2391-5420. Dostupné z: https://dx.doi.org/10.1515/chem-2015-0047.
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