| HUMLÍČEK, Josef a Jan ŠIK. Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples. Journal of Applied Physics. Melville (USA): American Institute of Physics, 2015, roč. 118, č. 19, s. nestránkováno, 6 s. ISSN 0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4936126. |
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@article{1331073,
author = {Humlíček, Josef and Šik, Jan},
article_location = {Melville (USA)},
article_number = {19},
doi = {http://dx.doi.org/10.1063/1.4936126},
keywords = {silicon; optical functions},
language = {eng},
issn = {0021-8979},
journal = {Journal of Applied Physics},
title = {Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples},
url = {http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126},
volume = {118},
year = {2015}
}
TY - JOUR
ID - 1331073
AU - Humlíček, Josef - Šik, Jan
PY - 2015
TI - Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples
JF - Journal of Applied Physics
VL - 118
IS - 19
SP - nestránkováno
EP - nestránkováno
PB - American Institute of Physics
SN - 00218979
KW - silicon
KW - optical functions
UR - http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126
L2 - http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126
N2 - The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in near ultraviolet. Very high precision values of the real part of the refractive index are obtained in infrared up to a photon energy of 1.3 eV. The spectra of the extinction coefficient, based on observations of light attenuation, extend to 3.2 eV due to measurements on SOI layers as thin as 87 nm. These results allowed us to correct spectroellipsometric data on homoepitaxial samples for the presence of reduced and stabilized surface layers.
ER -
HUMLÍČEK, Josef a Jan ŠIK. Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples. \textit{Journal of Applied Physics}. Melville (USA): American Institute of Physics, 2015, roč.~118, č.~19, s.~nestránkováno, 6 s. ISSN~0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4936126.
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