Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

J 2016

Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

ISA, F., M. SALVALAGLIO, YAR. DASILVA, Mojmír MEDUŇA, M. BARGET et. al.

Basic information

Original name

Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

Name in Czech

Vysoce nepřizpůsobené bezdislokační SiGe/Si heterostruktury

Authors

ISA, F. (380 Italy), M. SALVALAGLIO (380 Italy), YAR. DASILVA (756 Switzerland), Mojmír MEDUŇA (203 Czech Republic, guarantor, belonging to the institution), M. BARGET (380 Italy), A. JUNG (756 Switzerland), T. KREILIGER (756 Switzerland), Gisella CANO I RUIZ (380 Italy), R. ERNI (756 Switzerland), F. PEZZOLI (380 Italy), E. BONERA (380 Italy), P. NIEDERMANN (756 Switzerland), P. GRONING (756 Switzerland), F. MONTALENTI (380 Italy) and Hans VON KAENEL (756 Switzerland)

Edition

ADVANCED MATERIALS, WEINHEIM, WILEY-V C H VERLAG GMBH, 2016, 0935-9648

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Germany

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 19.791

RIV identification code

RIV/00216224:14740/16:00089505

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1002/adma.201504029

UT WoS

000369978800010

Keywords (in Czech)

heteroepitaxe; heterostruktury; relaxace pnutí; SiGe; vzorkovaný substrát

Keywords in English

heteroepitaxy; heterostructures; strain relaxation; SiGe; substrate patterning

Abstract

ORIG CZ

V originále

Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading.

In Czech

Bezdislokační nepřizpůsobené heterostruktury na Si substrítech jsou vyrobeny novou strategií. Relaxace pnutí je navrženo tak že je elastické spíše než plastické, kombinací vhodného vzorkovaného substrátu a vertikálním růstem krystaslů s gradovaným složením.

Links

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

EE2.3.20.0027, research and development project

Name: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií

LM2011020, research and development project

Name: CEITEC ? open access

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

ISA, F., M. SALVALAGLIO, YAR. DASILVA, Mojmír MEDUŇA, M. BARGET, A. JUNG, T. KREILIGER, Gisella CANO I RUIZ, R. ERNI, F. PEZZOLI, E. BONERA, P. NIEDERMANN, P. GRONING, F. MONTALENTI and Hans VON KAENEL. Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. ADVANCED MATERIALS. WEINHEIM: WILEY-V C H VERLAG GMBH, 2016, vol. 28, No 5, p. 884-888. ISSN 0935-9648. Available from: https://dx.doi.org/10.1002/adma.201504029.

@article{1338590,
   author = {Isa, F. and Salvalaglio, M. and Dasilva, YAR. and Meduňa, Mojmír and Barget, M. and Jung, A. and Kreiliger, T. and Cano i Ruiz, Gisella and Erni, R. and Pezzoli, F. and Bonera, E. and Niedermann, P. and Groning, P. and Montalenti, F. and von Kaenel, Hans},
   article_location = {WEINHEIM},
   article_number = {5},
   doi = {http://dx.doi.org/10.1002/adma.201504029},
   keywords = {heteroepitaxy; heterostructures; strain relaxation; SiGe; substrate patterning},
   language = {eng},
   issn = {0935-9648},
   journal = {ADVANCED MATERIALS},
   title = {Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures},
   url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201504029/abstract},
   volume = {28},
   year = {2016}
}

TY  - JOUR
ID  - 1338590
AU  - Isa, F. - Salvalaglio, M. - Dasilva, YAR. - Meduňa, Mojmír - Barget, M. - Jung, A. - Kreiliger, T. - Cano i Ruiz, Gisella - Erni, R. - Pezzoli, F. - Bonera, E. - Niedermann, P. - Groning, P. - Montalenti, F. - von Kaenel, Hans
PY  - 2016
TI  - Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures
JF  - ADVANCED MATERIALS
VL  - 28
IS  - 5
SP  - 884-888
EP  - 884-888
PB  - WILEY-V C H VERLAG GMBH
SN  - 09359648
KW  - heteroepitaxy
KW  - heterostructures
KW  - strain relaxation
KW  - SiGe
KW  - substrate patterning
UR  - http://onlinelibrary.wiley.com/doi/10.1002/adma.201504029/abstract
L2  - http://onlinelibrary.wiley.com/doi/10.1002/adma.201504029/abstract
N2  - Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading.
ER  -

ISA, F., M. SALVALAGLIO, YAR. DASILVA, Mojmír MEDUŇA, M. BARGET, A. JUNG, T. KREILIGER, Gisella CANO I RUIZ, R. ERNI, F. PEZZOLI, E. BONERA, P. NIEDERMANN, P. GRONING, F. MONTALENTI and Hans VON KAENEL. Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. \textit{ADVANCED MATERIALS}. WEINHEIM: WILEY-V C H VERLAG GMBH, 2016, vol.~28, No~5, p.~884-888. ISSN~0935-9648. Available from: https://dx.doi.org/10.1002/adma.201504029.

Detailed Information on Publication Record