GaAs/Ge crystals grown on Si substrates patterned down to the
micron scale

J 2016

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

TABOADA, AG; Mojmír MEDUŇA; M. SALVALAGLIO; F. ISA; T. KREILIGER et. al.

Základní údaje

Originální název

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Název česky

GaAs/Ge krystaly pěstované na Si substrátech vzorkované až k mikronovému měřítku

Autoři

TABOADA, AG (724 Španělsko); Mojmír MEDUŇA (203 Česká republika, garant, domácí); M. SALVALAGLIO (380 Itálie); F. ISA (380 Itálie); T. KREILIGER (756 Švýcarsko); CV FALUB (642 Rumunsko); EB MEIER (756 Švýcarsko); E. MULLER (756 Švýcarsko); L. MIGLIO (380 Itálie); G. ISELLA (380 Itálie) a Hans VON KAENEL (756 Švýcarsko)

Vydání

Journal of Applied Physics, Melville, AMER INST PHYSICS, 2016, 0021-8979

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.068

Kód RIV

RIV/00216224:14740/16:00089507

Organizační jednotka

Středoevropský technologický institut

DOI

http://dx.doi.org/10.1063/1.4940379

UT WoS

000369900600024

EID Scopus

2-s2.0-84957998630

Klíčová slova česky

molekulová-svazková epitaxe; rtg-diffrakce; epitaxe zvýšené migrace; krátkoperiodická supermřížka; gradované vrstvy; nízká teplota; tvorba dslokací; heteroepitaxní vrstvy; teplotní expanze; si

Klíčová slova anglicky

molecular-beam epitaxy; x-ray-diffraction; migration-enhanced epitaxy; short-period superlattices; graded buffer layers; low-temperature; dislocation generation; heteroepitaxial films; thermal-expansion; on-si

Štítky

rivok

Změněno: 13. 3. 2018 10:01, Mgr. Mojmír Meduňa, Ph.D.

Anotace

V originále

Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-mu m-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images. (C) 2016 AIP Publishing LLC.

Návaznosti

CZ.1.07/2.4.00/17.0006, interní kód MU

Název: Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery, 2.4 Partnerství a sítě

ED1.1.00/02.0068, projekt VaV

Název: CEITEC - central european institute of technology

EE2.3.20.0027, projekt VaV

Název: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií

LM2011020, projekt VaV

Název: CEITEC ? open access

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC - open access

Citovat

TABOADA, AG; Mojmír MEDUŇA; M. SALVALAGLIO; F. ISA; T. KREILIGER; CV FALUB; EB MEIER; E. MULLER; L. MIGLIO; G. ISELLA a Hans VON KAENEL. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale. Journal of Applied Physics. Melville: AMER INST PHYSICS, 2016, roč. 119, č. 5, s. nestránkováno, 12 s. ISSN 0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4940379.

@article{1338600,
   author = {Taboada, AG and Meduňa, Mojmír and Salvalaglio, M. and Isa, F. and Kreiliger, T. and Falub, CV and Meier, EB and Muller, E. and Miglio, L. and Isella, G. and von Kaenel, Hans},
   article_location = {Melville},
   article_number = {5},
   doi = {http://dx.doi.org/10.1063/1.4940379},
   keywords = {molecular-beam epitaxy; x-ray-diffraction; migration-enhanced epitaxy; short-period superlattices; graded buffer layers; low-temperature; dislocation generation; heteroepitaxial films; thermal-expansion; on-si},
   language = {eng},
   issn = {0021-8979},
   journal = {Journal of Applied Physics},
   title = {GaAs/Ge crystals grown on Si substrates patterned down to the micron scale},
   url = {http://aip.scitation.org/doi/10.1063/1.4940379},
   volume = {119},
   year = {2016}
}

TY  - JOUR
ID  - 1338600
AU  - Taboada, AG - Meduňa, Mojmír - Salvalaglio, M. - Isa, F. - Kreiliger, T. - Falub, CV - Meier, EB - Muller, E. - Miglio, L. - Isella, G. - von Kaenel, Hans
PY  - 2016
TI  - GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
JF  - Journal of Applied Physics
VL  - 119
IS  - 5
SP  - nestránkováno
EP  - nestránkováno
PB  - AMER INST PHYSICS
SN  - 00218979
KW  - molecular-beam epitaxy
KW  - x-ray-diffraction
KW  - migration-enhanced epitaxy
KW  - short-period superlattices
KW  - graded buffer layers
KW  - low-temperature
KW  - dislocation generation
KW  - heteroepitaxial films
KW  - thermal-expansion
KW  - on-si
UR  - http://aip.scitation.org/doi/10.1063/1.4940379
L2  - http://aip.scitation.org/doi/10.1063/1.4940379
N2  - Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-mu m-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images. (C) 2016 AIP Publishing LLC.
ER  -

TABOADA, AG; Mojmír MEDUŇA; M. SALVALAGLIO; F. ISA; T. KREILIGER; CV FALUB; EB MEIER; E. MULLER; L. MIGLIO; G. ISELLA a Hans VON KAENEL. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale. \textit{Journal of Applied Physics}. Melville: AMER INST PHYSICS, 2016, roč.~119, č.~5, s.~nestránkováno, 12 s. ISSN~0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4940379.

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