TABOADA, AG, Mojmír MEDUŇA, M. SALVALAGLIO, F. ISA, T. KREILIGER, CV FALUB, EB MEIER, E. MULLER, L. MIGLIO, G. ISELLA a Hans VON KAENEL. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale. Journal of Applied Physics. Melville: AMER INST PHYSICS, 2016, roč. 119, č. 5, s. nestránkováno, 12 s. ISSN 0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4940379. |
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@article{1338600, author = {Taboada, AG and Meduňa, Mojmír and Salvalaglio, M. and Isa, F. and Kreiliger, T. and Falub, CV and Meier, EB and Muller, E. and Miglio, L. and Isella, G. and von Kaenel, Hans}, article_location = {Melville}, article_number = {5}, doi = {http://dx.doi.org/10.1063/1.4940379}, keywords = {molecular-beam epitaxy; x-ray-diffraction; migration-enhanced epitaxy; short-period superlattices; graded buffer layers; low-temperature; dislocation generation; heteroepitaxial films; thermal-expansion; on-si}, language = {eng}, issn = {0021-8979}, journal = {Journal of Applied Physics}, title = {GaAs/Ge crystals grown on Si substrates patterned down to the micron scale}, url = {http://aip.scitation.org/doi/10.1063/1.4940379}, volume = {119}, year = {2016} }
TY - JOUR ID - 1338600 AU - Taboada, AG - Meduňa, Mojmír - Salvalaglio, M. - Isa, F. - Kreiliger, T. - Falub, CV - Meier, EB - Muller, E. - Miglio, L. - Isella, G. - von Kaenel, Hans PY - 2016 TI - GaAs/Ge crystals grown on Si substrates patterned down to the micron scale JF - Journal of Applied Physics VL - 119 IS - 5 SP - nestránkováno EP - nestránkováno PB - AMER INST PHYSICS SN - 00218979 KW - molecular-beam epitaxy KW - x-ray-diffraction KW - migration-enhanced epitaxy KW - short-period superlattices KW - graded buffer layers KW - low-temperature KW - dislocation generation KW - heteroepitaxial films KW - thermal-expansion KW - on-si UR - http://aip.scitation.org/doi/10.1063/1.4940379 L2 - http://aip.scitation.org/doi/10.1063/1.4940379 N2 - Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-mu m-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images. (C) 2016 AIP Publishing LLC. ER -
TABOADA, AG, Mojmír MEDUŇA, M. SALVALAGLIO, F. ISA, T. KREILIGER, CV FALUB, EB MEIER, E. MULLER, L. MIGLIO, G. ISELLA a Hans VON KAENEL. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale. \textit{Journal of Applied Physics}. Melville: AMER INST PHYSICS, 2016, roč.~119, č.~5, s.~nestránkováno, 12 s. ISSN~0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4940379.
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