| ROZBOŘIL, Jakub, Mojmír MEDUŇA, Claudiu Valentin FALUB, Fabio ISA a Hans VON KÄNEL. Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. WEINHEIM: Wiley, 2016, roč. 213, č. 2, s. 463-469. ISSN 1862-6300. Dostupné z: https://dx.doi.org/10.1002/pssa.201532643. |
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@article{1338601,
author = {Rozbořil, Jakub and Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and von Känel, Hans},
article_location = {WEINHEIM},
article_number = {2},
doi = {http://dx.doi.org/10.1002/pssa.201532643},
keywords = {crystal defects; Ge microcrystals; patterned Si substrate; X-ray diffraction},
language = {eng},
issn = {1862-6300},
journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
title = {Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction},
url = {http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532643/abstract},
volume = {213},
year = {2016}
}
TY - JOUR
ID - 1338601
AU - Rozbořil, Jakub - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - von Känel, Hans
PY - 2016
TI - Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction
JF - PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
VL - 213
IS - 2
SP - 463-469
EP - 463-469
PB - Wiley
SN - 18626300
KW - crystal defects
KW - Ge microcrystals
KW - patterned Si substrate
KW - X-ray diffraction
UR - http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532643/abstract
L2 - http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532643/abstract
N2 - Deposition on patterned substrates is a promising method for obtaining high quality, strain and defect free heteroepitaxial layers. In this paper we investigate the crystalline structure of quasi-continuous Ge layers consisting of closely spaced microcrystals on a Si substrate patterned in the form of a regular net of lithographically defined squared based pillars. Lattice parameters, strain and degree of relaxation of the Ge microcrystals are measured by standard high-resolution X-ray diffraction using reciprocal space mapping. In particular, we focus on the impact of Si pillar size and spacing on the Ge crystal quality by analyzing how the bending of crystal lattice planes caused by thermal stress relaxation and random crystal tilts affect the width of the diffraction peaks.
ER -
ROZBOŘIL, Jakub, Mojmír MEDUŇA, Claudiu Valentin FALUB, Fabio ISA a Hans VON KÄNEL. Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction. \textit{PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}. WEINHEIM: Wiley, 2016, roč.~213, č.~2, s.~463-469. ISSN~1862-6300. Dostupné z: https://dx.doi.org/10.1002/pssa.201532643.
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