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@article{1339202,
author = {Homola, Tomáš and Prysiazhnyi, Vadym and Stupavská, Monika},
article_number = {5/6},
doi = {http://dx.doi.org/10.1504/IJNM.2015.075226},
keywords = {nano-modification;silicon wafer;surface treatment;diffuse plasma;DBD},
language = {eng},
issn = {1746-9392},
journal = {International Journal of Nanomanufacturing},
title = {Nano-modification of Si-wafer surfaces using low-cost ambient air diffuse plasma},
url = {http://www.inderscience.com/info/inarticle.php?artid=75226},
volume = {11},
year = {2015}
}
TY - JOUR
ID - 1339202
AU - Homola, Tomáš - Prysiazhnyi, Vadym - Stupavská, Monika
PY - 2015
TI - Nano-modification of Si-wafer surfaces using low-cost ambient air diffuse plasma
JF - International Journal of Nanomanufacturing
VL - 11
IS - 5/6
SP - 237-244
EP - 237-244
SN - 17469392
KW - nano-modification;silicon wafer;surface treatment;diffuse plasma;DBD
UR - http://www.inderscience.com/info/inarticle.php?artid=75226
N2 - In this paper, we demonstrated the cleaning and nano-oxidation of Si-wafer surfaces by atmospheric pressure plasma, generated in ambient air using diffuse coplanar surface barrier discharge. Plasma treatment for one second resulted in a significant reduction of water contact angle. The increase in wettability was observed and explained by chemical changes on the analysed Si-wafer surfaces. These changes were analysed by X-ray photoelectron spectroscopy which showed a considerable decrease in the presence of carbon and a significant increase of oxygen on the analysed surfaces.
ER -
HOMOLA, Tomáš, Vadym PRYSIAZHNYI a Monika STUPAVSKÁ. Nano-modification of Si-wafer surfaces using low-cost ambient air diffuse plasma. \textit{International Journal of Nanomanufacturing}. 2015, roč.~11, 5/6, s.~237-244. ISSN~1746-9392. Dostupné z: https://dx.doi.org/10.1504/IJNM.2015.075226.
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