Local strain and defects in silicon wafers due to
nanoindentation revealed by full-field X-ray microdiffraction
imaging

J 2015

Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging

LI, Z.J.; A.N. DANILEWSKY; L. HELFEN; Petr MIKULÍK; D. HAENSCHKE et al.

Základní údaje

Originální název

Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging

Autoři

LI, Z.J.; A.N. DANILEWSKY; L. HELFEN; Petr MIKULÍK; D. HAENSCHKE; J. WITTGE; D. ALLEN; P. MCNALLY a T. BAUMBACH

Vydání

Journal of Synchrotron Radiation, USA, WILEY-BLACKWELL PUBLISHING, 2015, 0909-0495

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.877

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/15:00087093

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1107/S1600577515009650

UT WoS

000357407900027

EID Scopus

2-s2.0-84937428327

Klíčová slova anglicky

XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging

Štítky

AKR, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 7. 4. 2016 08:57, Ing. Andrea Mikešková

Anotace

V originále

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.

Citovat

LI, Z.J.; A.N. DANILEWSKY; L. HELFEN; Petr MIKULÍK; D. HAENSCHKE; J. WITTGE; D. ALLEN; P. MCNALLY a T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. Journal of Synchrotron Radiation. USA: WILEY-BLACKWELL PUBLISHING, 2015, roč. 22, July, s. 1083-1090. ISSN 0909-0495. Dostupné z: https://doi.org/10.1107/S1600577515009650.

@article{1340227,
   author = {Li, Z.J. and Danilewsky, A.N. and Helfen, L. and Mikulík, Petr and Haenschke, D. and Wittge, J. and Allen, D. and McNally, P. and Baumbach, T.},
   article_location = {USA},
   article_number = {July},
   doi = {https://doi.org/10.1107/S1600577515009650},
   keywords = {XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging},
   language = {eng},
   issn = {0909-0495},
   journal = {Journal of Synchrotron Radiation},
   title = {Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging},
   url = {http://journals.iucr.org/s/issues/2015/04/00/ie5133/},
   volume = {22},
   year = {2015}
}

TY  - JOUR
ID  - 1340227
AU  - Li, Z.J. - Danilewsky, A.N. - Helfen, L. - Mikulík, Petr - Haenschke, D. - Wittge, J. - Allen, D. - McNally, P. - Baumbach, T.
PY  - 2015
TI  - Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging
JF  - Journal of Synchrotron Radiation
VL  - 22
IS  - July
SP  - 1083-1090
EP  - 1083-1090
PB  - WILEY-BLACKWELL PUBLISHING
SN  - 09090495
KW  - XMDI
KW  - nanoindentation
KW  - silicon
KW  - strain
KW  - defect
KW  - x-rays
KW  - microdiffraction
KW  - imaging
UR  - http://journals.iucr.org/s/issues/2015/04/00/ie5133/
N2  - Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.
ER  -

LI, Z.J.; A.N. DANILEWSKY; L. HELFEN; Petr MIKULÍK; D. HAENSCHKE; J. WITTGE; D. ALLEN; P. MCNALLY a T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. \textit{Journal of Synchrotron Radiation}. USA: WILEY-BLACKWELL PUBLISHING, 2015, roč.~22, July, s.~1083-1090. ISSN~0909-0495. Dostupné z: https://doi.org/10.1107/S1600577515009650.

Přehled o publikaci