| LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE, J. WITTGE, D. ALLEN, P. MCNALLY a T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. Journal of Synchrotron Radiation. USA: WILEY-BLACKWELL PUBLISHING, 2015, roč. 22, July, s. 1083-1090. ISSN 0909-0495. Dostupné z: https://dx.doi.org/10.1107/S1600577515009650. |
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@article{1340227,
author = {Li, Z.J. and Danilewsky, A.N. and Helfen, L. and Mikulík, Petr and Haenschke, D. and Wittge, J. and Allen, D. and McNally, P. and Baumbach, T.},
article_location = {USA},
article_number = {July},
doi = {http://dx.doi.org/10.1107/S1600577515009650},
keywords = {XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging},
language = {eng},
issn = {0909-0495},
journal = {Journal of Synchrotron Radiation},
title = {Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging},
url = {http://journals.iucr.org/s/issues/2015/04/00/ie5133/},
volume = {22},
year = {2015}
}
TY - JOUR
ID - 1340227
AU - Li, Z.J. - Danilewsky, A.N. - Helfen, L. - Mikulík, Petr - Haenschke, D. - Wittge, J. - Allen, D. - McNally, P. - Baumbach, T.
PY - 2015
TI - Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging
JF - Journal of Synchrotron Radiation
VL - 22
IS - July
SP - 1083-1090
EP - 1083-1090
PB - WILEY-BLACKWELL PUBLISHING
SN - 09090495
KW - XMDI
KW - nanoindentation
KW - silicon
KW - strain
KW - defect
KW - x-rays
KW - microdiffraction
KW - imaging
UR - http://journals.iucr.org/s/issues/2015/04/00/ie5133/
N2 - Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.
ER -
LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE, J. WITTGE, D. ALLEN, P. MCNALLY a T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. \textit{Journal of Synchrotron Radiation}. USA: WILEY-BLACKWELL PUBLISHING, 2015, roč.~22, July, s.~1083-1090. ISSN~0909-0495. Dostupné z: https://dx.doi.org/10.1107/S1600577515009650.
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