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@proceedings{1340994, author = {Krumpolec, Richard and Čech, Jan and Černák, Mirko}, booktitle = {6th Central European Symposium on Plasma Chemistry}, keywords = {DCSBD; atmospheric pressure; silicone oxide; hydrogen; etching}, language = {eng}, isbn = {978-88-6938-045-7}, title = {SiO2/Si etching in atmospheric pressure hydrogen DBD plasma}, year = {2015} }
TY - CONF ID - 1340994 AU - Krumpolec, Richard - Čech, Jan - Černák, Mirko PY - 2015 TI - SiO2/Si etching in atmospheric pressure hydrogen DBD plasma SN - 9788869380457 KW - DCSBD KW - atmospheric pressure KW - silicone oxide KW - hydrogen KW - etching N2 - The SiO2/Si etching was studied in DCSBD discharge generated in pure hydrogen at atmospheric pressure and room temeperature conditions. The estimated etching rate of SiO2 was approx. 1 nm/min. ER -
KRUMPOLEC, Richard, Jan ČECH a Mirko ČERNÁK. SiO2/Si etching in atmospheric pressure hydrogen DBD plasma. In \textit{6th Central European Symposium on Plasma Chemistry}. 2015. ISBN~978-88-6938-045-7.
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