SiC characterization using optical and x-ray techniques

HUMLÍČEK, Josef a Ondřej CAHA. SiC characterization using optical and x-ray techniques. Brno: ON Semiconductor CR, 2015, 17 s.

Základní údaje

Originální název

SiC characterization using optical and x-ray techniques

Autoři

HUMLÍČEK, Josef (203 Česká republika, garant, domácí) a Ondřej CAHA (203 Česká republika, domácí)

Vydání

Brno, 17 s. 2015

Nakladatel

ON Semiconductor CR

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Další údaje

Jazyk

angličtina

Typ výsledku

Výzkumná zpráva

Obor

10302 Condensed matter physics

Stát vydavatele

Česká republika

Utajení

obsah podléhá obchodnímu tajemství

Kód RIV

RIV/00216224:14740/15:00087334

Organizační jednotka

Středoevropský technologický institut

Klíčová slova anglicky

Silicon carbide; X-ray diffraction; optical spectroscopy; intergap states

Štítky

rivok

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Anotace

V originále

*Goal: Using methods available at Department of Condensed Matter Physics, characterize optical and crystallographic properties of silicon carbide. Description: ON Semiconductor Czech Republic is running a proof-of-concept project evaluating the potential of silicon carbide devices. Since SiC material properties are signif- icantly different from those of silicon, their knowledge is important to consider the future fabrication process. The goal of this project is the feasibility evaluation of optical and X-ray methods for SiC study, as well as basic characterization of optical properties and crystallographic quality of provided samples. Project milestones are: • Characterize SiC optical properties in the range critical for wafer fab tools (UV-VIS- NIR), investigate non-uniformity of optical parameters on SiC wafer. • Evaluate potential of other optical characterization techniques (IR, Raman). • Perform a feasibility study of x-ray methods for characterization of crystallographic quality and defects in SiC. SiC samples will be supplied by ON Semiconductor.*