2015
SiC characterization using optical and x-ray techniques
HUMLÍČEK, Josef and Ondřej CAHABasic information
Original name
SiC characterization using optical and x-ray techniques
Authors
HUMLÍČEK, Josef (203 Czech Republic, guarantor, belonging to the institution) and Ondřej CAHA (203 Czech Republic, belonging to the institution)
Edition
Brno, 17 pp. 2015
Publisher
ON Semiconductor CR
Other information
Language
English
Type of outcome
Research report
Field of Study
10302 Condensed matter physics
Country of publisher
Czech Republic
Confidentiality degree
contents are subject to a state secret
RIV identification code
RIV/00216224:14740/15:00087334
Organization unit
Central European Institute of Technology
Keywords in English
Silicon carbide; X-ray diffraction; optical spectroscopy; intergap states
Tags
Changed: 21/4/2016 15:40, Mgr. Eva Špillingová
Abstract
In the original language
*Goal: Using methods available at Department of Condensed Matter Physics, characterize optical and crystallographic properties of silicon carbide. Description: ON Semiconductor Czech Republic is running a proof-of-concept project evaluating the potential of silicon carbide devices. Since SiC material properties are signif- icantly different from those of silicon, their knowledge is important to consider the future fabrication process. The goal of this project is the feasibility evaluation of optical and X-ray methods for SiC study, as well as basic characterization of optical properties and crystallographic quality of provided samples. Project milestones are: • Characterize SiC optical properties in the range critical for wafer fab tools (UV-VIS- NIR), investigate non-uniformity of optical parameters on SiC wafer. • Evaluate potential of other optical characterization techniques (IR, Raman). • Perform a feasibility study of x-ray methods for characterization of crystallographic quality and defects in SiC. SiC samples will be supplied by ON Semiconductor.*