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@misc{1343083,
author = {Humlíček, Josef and Caha, Ondřej},
address = {Brno},
keywords = {Silicon carbide; X-ray diffraction; optical spectroscopy; intergap states},
language = {eng},
location = {Brno},
publisher = {ON Semiconductor CR},
title = {SiC characterization using optical and x-ray techniques},
year = {2015}
}
TY - GEN
ID - 1343083
AU - Humlíček, Josef - Caha, Ondřej
PY - 2015
TI - SiC characterization using optical and x-ray techniques
VL - neuveden
PB - ON Semiconductor CR
CY - Brno
KW - Silicon carbide
KW - X-ray diffraction
KW - optical spectroscopy
KW - intergap states
N2 - *Goal: Using methods available at Department of Condensed Matter Physics, characterize optical and crystallographic properties of silicon carbide. Description: ON Semiconductor Czech Republic is running a proof-of-concept project evaluating the potential of silicon carbide devices. Since SiC material properties are signif- icantly different from those of silicon, their knowledge is important to consider the future fabrication process. The goal of this project is the feasibility evaluation of optical and X-ray methods for SiC study, as well as basic characterization of optical properties and crystallographic quality of provided samples. Project milestones are: • Characterize SiC optical properties in the range critical for wafer fab tools (UV-VIS- NIR), investigate non-uniformity of optical parameters on SiC wafer. • Evaluate potential of other optical characterization techniques (IR, Raman). • Perform a feasibility study of x-ray methods for characterization of crystallographic quality and defects in SiC. SiC samples will be supplied by ON Semiconductor.*
ER -
HUMLÍČEK, Josef a Ondřej CAHA. \textit{SiC characterization using optical and x-ray techniques}. Brno: ON Semiconductor CR, 2015, 17 s.
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