V 2015

R&D of x-ray and spectroscopic methods for characterization of TIGBT device

WANG, Chennan; Josef HUMLÍČEK a Ondřej CAHA

Základní údaje

Originální název

R&D of x-ray and spectroscopic methods for characterization of TIGBT device

Autoři

Vydání

Brno, 40 s. 2015

Nakladatel

ON Semiconductor CR

Další údaje

Jazyk

angličtina

Typ výsledku

Výzkumná zpráva

Obor

10302 Condensed matter physics

Stát vydavatele

Česká republika

Utajení

obsah podléhá obchodnímu tajemství

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14740/15:00087335

Organizační jednotka

Středoevropský technologický institut

Klíčová slova anglicky

insulating gate bipolar transistor; X-ray characterization; Raman spectroscopy; stress

Štítky

Změněno: 3. 5. 2016 15:05, Mgr. Eva Špillingová

Anotace

V originále

*Goal: Utilization of characterization methods at CEITEC MU for R&D of Trench-Insulated-Gate-Bipolar-Transistor (TIGBT) Device Description: ON SEMICONDUCTOR with CEITEC MU have have started R&D of TIGBT technology. ON SEMICONDUCTOR asked CEITEC MU for advanced material characterization of TIGBT wafers and devices and for feasibility of new methods for this characterization. Milestones: · Perform characterization of TIGBT wafers (including SOI substrates). · Evaluation of feasibility of x-ray topography and scattering for defects analysis. · Evaluation of feasibility of Raman spectroscopy for analysis of defects and of internal strain. · Evaluation of feasibility of other methods for TIGBT characterization. · Modeling of temperature distribution in Si wafer during laser annealing. Samples of TIGBT devices and wafers (including SOI substrates) will be supplied by ON SEMICONDUCTOR.*