Další formáty:
BibTeX
LaTeX
RIS
@misc{1343084,
author = {Wang, Chennan and Humlíček, Josef and Caha, Ondřej},
address = {Brno},
keywords = {insulating gate bipolar transistor; X-ray characterization; Raman spectroscopy; stress},
language = {eng},
location = {Brno},
publisher = {ON Semiconductor CR},
title = {R&D of x-ray and spectroscopic methods for characterization of TIGBT device},
year = {2015}
}
TY - GEN
ID - 1343084
AU - Wang, Chennan - Humlíček, Josef - Caha, Ondřej
PY - 2015
TI - R&D of x-ray and spectroscopic methods for characterization of TIGBT device
VL - neuveden
PB - ON Semiconductor CR
CY - Brno
KW - insulating gate bipolar transistor
KW - X-ray characterization
KW - Raman spectroscopy
KW - stress
N2 - *Goal: Utilization of characterization methods at CEITEC MU for R&D of Trench-Insulated-Gate-Bipolar-Transistor (TIGBT) Device Description: ON SEMICONDUCTOR with CEITEC MU have have started R&D of TIGBT technology. ON SEMICONDUCTOR asked CEITEC MU for advanced material characterization of TIGBT wafers and devices and for feasibility of new methods for this characterization. Milestones: · Perform characterization of TIGBT wafers (including SOI substrates). · Evaluation of feasibility of x-ray topography and scattering for defects analysis. · Evaluation of feasibility of Raman spectroscopy for analysis of defects and of internal strain. · Evaluation of feasibility of other methods for TIGBT characterization. · Modeling of temperature distribution in Si wafer during laser annealing. Samples of TIGBT devices and wafers (including SOI substrates) will be supplied by ON SEMICONDUCTOR.*
ER -
WANG, Chennan, Josef HUMLÍČEK a Ondřej CAHA. \textit{R\&{}D of x-ray and spectroscopic methods for characterization of TIGBT device}. Brno: ON Semiconductor CR, 2015, 40 s.
|
