| MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN a Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. Journal of Applied Crystallography. Chester: INT UNION CRYSTALLOGRAPHY, 2016, roč. 49, June, s. 976-986. ISSN 1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576716006397. |
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@article{1345310,
author = {Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and Marzegalli, Anna and Chrastina, Daniel and Isella, Giovanni and Miglio, Leo and Dommann, Alex and von Kaenel, Hans},
article_location = {Chester},
article_number = {June},
doi = {http://dx.doi.org/10.1107/S1600576716006397},
keywords = {scanning X-ray nanodiffraction; lattice bending; Ge microcrystals; thermal strain relaxation},
language = {eng},
issn = {1600-5767},
journal = {Journal of Applied Crystallography},
title = {Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling},
url = {http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html},
volume = {49},
year = {2016}
}
TY - JOUR
ID - 1345310
AU - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - Marzegalli, Anna - Chrastina, Daniel - Isella, Giovanni - Miglio, Leo - Dommann, Alex - von Kaenel, Hans
PY - 2016
TI - Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling
JF - Journal of Applied Crystallography
VL - 49
IS - June
SP - 976-986
EP - 976-986
PB - INT UNION CRYSTALLOGRAPHY
SN - 16005767
KW - scanning X-ray nanodiffraction
KW - lattice bending
KW - Ge microcrystals
KW - thermal strain relaxation
UR - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html
L2 - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html
N2 - Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.
ER -
MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN a Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. \textit{Journal of Applied Crystallography}. Chester: INT UNION CRYSTALLOGRAPHY, 2016, roč.~49, June, s.~976-986. ISSN~1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576716006397.
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