MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN a Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. Journal of Applied Crystallography. Chester: INT UNION CRYSTALLOGRAPHY, 2016, roč. 49, June, s. 976-986. ISSN 1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576716006397. |
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@article{1345310, author = {Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and Marzegalli, Anna and Chrastina, Daniel and Isella, Giovanni and Miglio, Leo and Dommann, Alex and von Kaenel, Hans}, article_location = {Chester}, article_number = {June}, doi = {http://dx.doi.org/10.1107/S1600576716006397}, keywords = {scanning X-ray nanodiffraction; lattice bending; Ge microcrystals; thermal strain relaxation}, language = {eng}, issn = {1600-5767}, journal = {Journal of Applied Crystallography}, title = {Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling}, url = {http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html}, volume = {49}, year = {2016} }
TY - JOUR ID - 1345310 AU - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - Marzegalli, Anna - Chrastina, Daniel - Isella, Giovanni - Miglio, Leo - Dommann, Alex - von Kaenel, Hans PY - 2016 TI - Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling JF - Journal of Applied Crystallography VL - 49 IS - June SP - 976-986 EP - 976-986 PB - INT UNION CRYSTALLOGRAPHY SN - 16005767 KW - scanning X-ray nanodiffraction KW - lattice bending KW - Ge microcrystals KW - thermal strain relaxation UR - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html L2 - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html N2 - Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height. ER -
MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN a Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. \textit{Journal of Applied Crystallography}. Chester: INT UNION CRYSTALLOGRAPHY, 2016, roč.~49, June, s.~976-986. ISSN~1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576716006397.
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