Structural and morphological characterization of Al2O3 coated
macro-porous silicon by atomic layer deposition

J 2016

Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition

SAMPATH, Sridhar; Philipp MAYDANNIK; Tatiana IVANOVA; Tomáš HOMOLA; Mika SILLANPAA et. al.

Základní údaje

Originální název

Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition

Autoři

SAMPATH, Sridhar; Philipp MAYDANNIK; Tatiana IVANOVA; Tomáš HOMOLA; Mika SILLANPAA; Rameshbabu NAGUMOTHU a Viswanathan ALAGAN

Vydání

Thin Solid Films, 2016, 0040-6090

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Švýcarsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.879

Kód RIV

RIV/00216224:14310/16:00090987

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1016/j.tsf.2016.09.026

UT WoS

000389388600089

EID Scopus

2-s2.0-84988883610

Klíčová slova anglicky

Electrochemical anodization;Atomic layer deposition;Porous silicon;Conformal coating;Band gap energy

Štítky

AKR, rivok

Změněno: 13. 4. 2017 23:06, Ing. Andrea Mikešková

Anotace

V originále

In the present study, Al2O3 coated on macro-porous silicon (m-PS) is prepared by atomic layer deposition (ALD) whereas m-PS is prepared by electrochemical anodization of P type silicon (100) with current density of 15 mA/cm2. Field emission scanning electron microscopy analysis shows Al2O3 nanoparticles with size of ~ 100 nm are conformally coated on m-PS. The surface chemistry and formation mechanism of ALD of Al2O3 (ALD-Al2O3) on m-PS are demonstrated in detail. Optical profilometer results of Al2O3/m-PS confirm conformality of Al2O3 coating on m-PS because the surface amplitude parameter values of m-PS are decreased after ALD-Al2O3. Fourier Transform Infrared analysis confirms that unstable Si-H species of m-PS are replaced with stable Si-Al species. X-ray photoelectron spectroscopy (XPS) analysis of Al2O3/m-PS is carried out for chemical analysis and band gap energy measurement of Al2O3. The XPS survey spectrum shows that fluorine peak is also evolved along with Al, O and C elements which confirm that m-PS surface consists of fluorine. The band gap energy of Al2O3 coating is calculated as 6.91 eV from analysis of high resolution O 1s spectrum.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

SAMPATH, Sridhar; Philipp MAYDANNIK; Tatiana IVANOVA; Tomáš HOMOLA; Mika SILLANPAA; Rameshbabu NAGUMOTHU a Viswanathan ALAGAN. Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition. Thin Solid Films. 2016, roč. 616, October, s. 628-634. ISSN 0040-6090. Dostupné z: https://doi.org/10.1016/j.tsf.2016.09.026.

@article{1355392,
   author = {Sampath, Sridhar and Maydannik, Philipp and Ivanova, Tatiana and Homola, Tomáš and Sillanpaa, Mika and Nagumothu, Rameshbabu and Alagan, Viswanathan},
   article_number = {October},
   doi = {https://doi.org/10.1016/j.tsf.2016.09.026},
   keywords = {Electrochemical anodization;Atomic layer deposition;Porous silicon;Conformal coating;Band gap energy},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition},
   url = {http://www.sciencedirect.com/science/article/pii/S004060901630534X},
   volume = {616},
   year = {2016}
}

TY  - JOUR
ID  - 1355392
AU  - Sampath, Sridhar - Maydannik, Philipp - Ivanova, Tatiana - Homola, Tomáš - Sillanpaa, Mika - Nagumothu, Rameshbabu - Alagan, Viswanathan
PY  - 2016
TI  - Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition
JF  - Thin Solid Films
VL  - 616
IS  - October
SP  - 628-634
EP  - 628-634
SN  - 00406090
KW  - Electrochemical anodization;Atomic layer deposition;Porous silicon;Conformal coating;Band gap energy
UR  - http://www.sciencedirect.com/science/article/pii/S004060901630534X
L2  - http://www.sciencedirect.com/science/article/pii/S004060901630534X
N2  - In the present study, Al2O3 coated on macro-porous silicon (m-PS) is prepared by atomic layer deposition (ALD) whereas m-PS is prepared by electrochemical anodization of P type silicon (100) with current density of 15 mA/cm2. Field emission scanning electron microscopy analysis shows Al2O3 nanoparticles with size of ~ 100 nm are conformally coated on m-PS. The surface chemistry and formation mechanism of ALD of Al2O3 (ALD-Al2O3) on m-PS are demonstrated in detail. Optical profilometer results of Al2O3/m-PS confirm conformality of Al2O3 coating on m-PS because the surface amplitude parameter values of m-PS are decreased after ALD-Al2O3. Fourier Transform Infrared analysis confirms that unstable Si-H species of m-PS are replaced with stable Si-Al species. X-ray photoelectron spectroscopy (XPS) analysis of Al2O3/m-PS is carried out for chemical analysis and band gap energy measurement of Al2O3. The XPS survey spectrum shows that fluorine peak is also evolved along with Al, O and C elements which confirm that m-PS surface consists of fluorine. The band gap energy of Al2O3 coating is calculated as 6.91 eV from analysis of high resolution O 1s spectrum.
ER  -

SAMPATH, Sridhar; Philipp MAYDANNIK; Tatiana IVANOVA; Tomáš HOMOLA; Mika SILLANPAA; Rameshbabu NAGUMOTHU a Viswanathan ALAGAN. Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition. \textit{Thin Solid Films}. 2016, roč.~616, October, s.~628-634. ISSN~0040-6090. Dostupné z: https://doi.org/10.1016/j.tsf.2016.09.026.

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