Giant Rashba Splitting in Pb1-xSnxTe (111) Topological
Crystalline Insulator Films Controlled by Bi Doping in the Bulk

J 2017

Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

VOLOBUEV, V.; P. MANDAL; M. GALICKA; Ondřej CAHA; J. SANCHEZ-BARRIGA et al.

Základní údaje

Originální název

Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

Autoři

VOLOBUEV, V.; P. MANDAL; M. GALICKA; Ondřej CAHA; J. SANCHEZ-BARRIGA; D. DISANTE; A. VARYKHALOV; A. KHIAR; S. PICOZZI; Günther BAUER; P. KACMAN; R. BUCZKO; O. RADER a Günter SPRINGHOLZ

Vydání

ADVANCED MATERIALS, WEINHEIM, WILEY-V C H VERLAG GMBH, 2017, 0935-9648

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Německo

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 21.950

Kód RIV

RIV/00216224:14310/17:00096311

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1002/adma.201604185

UT WoS

000392729800018

EID Scopus

2-s2.0-85003475063

Klíčová slova česky

SnTe; PbTe; růst; povrchy; rozhraní; elektronová struktura

Klíčová slova anglicky

MOLECULAR-BEAM EPITAXY; SNTE; GROWTH; PBTE; STATES; REALIZATION; INTERFACE; SURFACES; STRAIN; PHASE

Štítky

NZ, rivok

Změněno: 4. 4. 2018 11:35, Ing. Nicole Zrilić

Anotace

ORIG CZ

V originále

The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.

Česky

Bylo prokázáno velké Rashbovo rozštění v PbSnTe topologických izolátorech.

Citovat

VOLOBUEV, V.; P. MANDAL; M. GALICKA; Ondřej CAHA; J. SANCHEZ-BARRIGA; D. DISANTE; A. VARYKHALOV; A. KHIAR; S. PICOZZI; Günther BAUER; P. KACMAN; R. BUCZKO; O. RADER a Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. ADVANCED MATERIALS. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, roč. 29, č. 3, s. "1604185-1"-"1604185-9", 9 s. ISSN 0935-9648. Dostupné z: https://doi.org/10.1002/adma.201604185.

@article{1375764,
   author = {Volobuev, V. and Mandal, P. and Galicka, M. and Caha, Ondřej and SanchezandBarriga, J. and DiSante, D. and Varykhalov, A. and Khiar, A. and Picozzi, S. and Bauer, Günther and Kacman, P. and Buczko, R. and Rader, O. and Springholz, Günter},
   article_location = {WEINHEIM},
   article_number = {3},
   doi = {https://doi.org/10.1002/adma.201604185},
   keywords = {MOLECULAR-BEAM EPITAXY; SNTE; GROWTH; PBTE; STATES; REALIZATION; INTERFACE; SURFACES; STRAIN; PHASE},
   language = {eng},
   issn = {0935-9648},
   journal = {ADVANCED MATERIALS},
   title = {Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk},
   volume = {29},
   year = {2017}
}

TY  - JOUR
ID  - 1375764
AU  - Volobuev, V. - Mandal, P. - Galicka, M. - Caha, Ondřej - Sanchez-Barriga, J. - DiSante, D. - Varykhalov, A. - Khiar, A. - Picozzi, S. - Bauer, Günther - Kacman, P. - Buczko, R. - Rader, O. - Springholz, Günter
PY  - 2017
TI  - Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
JF  - ADVANCED MATERIALS
VL  - 29
IS  - 3
SP  - "1604185-1"-"1604185-9"
EP  - "1604185-1"-"1604185-9"
PB  - WILEY-V C H VERLAG GMBH
SN  - 09359648
KW  - MOLECULAR-BEAM EPITAXY
KW  - SNTE
KW  - GROWTH
KW  - PBTE
KW  - STATES
KW  - REALIZATION
KW  - INTERFACE
KW  - SURFACES
KW  - STRAIN
KW  - PHASE
N2  - The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.
ER  -

VOLOBUEV, V.; P. MANDAL; M. GALICKA; Ondřej CAHA; J. SANCHEZ-BARRIGA; D. DISANTE; A. VARYKHALOV; A. KHIAR; S. PICOZZI; Günther BAUER; P. KACMAN; R. BUCZKO; O. RADER a Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. \textit{ADVANCED MATERIALS}. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, roč.~29, č.~3, s.~''1604185-1''-''1604185-9'', 9 s. ISSN~0935-9648. Dostupné z: https://doi.org/10.1002/adma.201604185.

Přehled o publikaci