Determination of the deposition and energy fluxes in industrial
deposition system

a 2018

Determination of the deposition and energy fluxes in industrial deposition system

KLEIN, Peter; Jaroslav HNILICA; Katarína BERNÁTOVÁ a Petr VAŠINA

Základní údaje

Originální název

Determination of the deposition and energy fluxes in industrial deposition system

Autoři

KLEIN, Peter; Jaroslav HNILICA; Katarína BERNÁTOVÁ a Petr VAŠINA

Vydání

16th International Conference on Plasma Surface Engineering, 2018

Další údaje

Jazyk

angličtina

Typ výsledku

Konferenční abstrakt

Obor

10305 Fluids and plasma physics

Stát vydavatele

Německo

Utajení

není předmětem státního či obchodního tajemství

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/18:00101856

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova česky

HiPIMS; Hustota toku hmotnosti; Depozičný tok

Klíčová slova anglicky

HiPIMS; Mass flow density; Deposition flux

Změněno: 3. 10. 2018 14:38, Mgr. Peter Klein, Ph.D.

Anotace

V originále

High efficiency of the sputtering process and good homogeneity of the deposited layers are among the most important issues being solved in the industry. Understanding the effects which influence both characteristics has therefore a high importance. Generally, in direct current magnetron sputtering (DCMS) higher deposition rate is provided compared to the high power impulse magnetron sputtering (HiPIMS). However, in HiPIMS higher homogeneity and overall quality of the coatings is achieved. Here a study is presented, where the influence of the process parameters on the deposition fluxes of atoms and ions in both DCMS and HiPIMS is investigated within the state of the art industrial deposition system. The direct comparison is made for the same deposition parameters such as working pressure and average power. To monitor the deposition rate and fluxes the quartz crystal monitor with biasable grids or gridless sensor with electron magnetic filter is attached on substrate holder. Measurement of the deposition flux itself is conducted by adjusting the bias voltage on the quartz crystal monitor grid. Increasing the voltage, more ions are repulsed from the grid up to the point where the whole deposition flux consists only from atoms. The energy resolved ion flux and total atom flux is obtained. By changing the position of the quartz crystal monitor spatial atom and ion flux resolution is obtained. Additionally, to directly measure the global energy transfer of the plasma to a surface, the heat flux microsensor (HFM) was employed. Such combination of diagnostic tools helps us to optimize the deposition process leading to creation of thin films with high quality and reproducibility.

Návaznosti

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

TJ01000157, projekt VaV

Název: Optimalizace procesu depozice průmyslových ochranných povlaků

Investor: Technologická agentura ČR, Optimalizace procesu depozice průmyslových ochranných povlaků

Citovat

KLEIN, Peter; Jaroslav HNILICA; Katarína BERNÁTOVÁ a Petr VAŠINA. Determination of the deposition and energy fluxes in industrial deposition system. In 16th International Conference on Plasma Surface Engineering. 2018.

@proceedings{1443618,
   author = {Klein, Peter and Hnilica, Jaroslav and Bernátová, Katarína and Vašina, Petr},
   booktitle = {16th International Conference on Plasma Surface Engineering},
   keywords = {HiPIMS; Mass flow density; Deposition flux},
   language = {eng},
   title = {Determination of the deposition and energy fluxes in industrial deposition system},
   year = {2018}
}

TY  - CONF
ID  - 1443618
AU  - Klein, Peter - Hnilica, Jaroslav - Bernátová, Katarína - Vašina, Petr
PY  - 2018
TI  - Determination of the deposition and energy fluxes in industrial deposition system
KW  - HiPIMS
KW  - Mass flow density
KW  - Deposition flux
N2  - High efficiency of the sputtering process and good homogeneity of the deposited layers are among the most important issues being solved in the industry. Understanding the effects which influence both characteristics has therefore a high importance. Generally, in direct current magnetron sputtering (DCMS) higher deposition rate is provided compared to the high power impulse magnetron sputtering (HiPIMS). However, in HiPIMS higher homogeneity and overall quality of the coatings is achieved. Here a study is presented, where the influence of the process parameters on the deposition fluxes of atoms and ions in both DCMS and HiPIMS is investigated within the state of the art industrial deposition system. The direct comparison is made for the same deposition parameters such as working pressure and average power. To monitor the deposition rate and fluxes the quartz crystal monitor with biasable grids or gridless sensor with electron magnetic filter is attached on substrate holder. Measurement of the deposition flux itself is conducted by adjusting the bias voltage on the quartz crystal monitor grid. Increasing the voltage, more ions are repulsed from the grid up to the point where the whole deposition flux consists only from atoms. The energy resolved ion flux and total atom flux is obtained. By changing the position of the quartz crystal monitor spatial atom and ion flux resolution is obtained. Additionally, to directly measure the global energy transfer of the plasma to a surface, the heat flux microsensor (HFM) was employed. Such combination of diagnostic tools helps us to optimize the deposition process leading to creation of thin films with high quality and reproducibility.
ER  -

KLEIN, Peter; Jaroslav HNILICA; Katarína BERNÁTOVÁ a Petr VAŠINA. Determination of the deposition and energy fluxes in industrial deposition system. In \textit{16th International Conference on Plasma Surface Engineering}. 2018.

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