Degradation analysis of GaAs solar cells at thermal stress

J 2018

Degradation analysis of GaAs solar cells at thermal stress

PAPEZ, N.; D. SOBOLA; L. SKVARENINA; P. SKARVADA; Dušan HEMZAL et. al.

Základní údaje

Originální název

Degradation analysis of GaAs solar cells at thermal stress

Autoři

PAPEZ, N. (garant); D. SOBOLA; L. SKVARENINA; P. SKARVADA; Dušan HEMZAL (203 Česká republika, domácí); P. TOFEL a L. GRMELA

Vydání

Applied Surface Science, AMSTERDAM, Elsevier Science BV, 2018, 0169-4332

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Česká republika

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 5.155

Kód RIV

RIV/00216224:14310/18:00104943

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.apsusc.2018.05.093

UT WoS

000450528100037

EID Scopus

2-s2.0-85047464406

Klíčová slova anglicky

GaAs; Solar cells; SEM; EDS; EDX; AFM; Noise; Infrared camera; I-V characteristics

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 23. 4. 2024 12:49, Mgr. Michal Petr

Anotace

V originále

The work focuses on the study of structure stability and electrical parameters of photovoltaic cells based on GaAs with Ge substrate. Solar cells of this type are used especially in adverse environments such as space applications, so their working parameters should be stable even under extreme operating conditions. Changes of electrical characteristics of the cells were recorded in the form of noise measurements for examination of distinctions in the pn-junction. Current-voltage characteristics under the light illumination and in the dark environment for comparison of the cells performance were also measured. Infrared camera showed the thermal irradiation of the stressed and damaged parts and support to localize the defected areas. Atomic force microscope (AFM) was applied for observation of changes in three-dimensional topography with high resolution. Scanning electron microscope (SEM) with energy-dispersive X-ray spectroscopy (EDS) showed morphology of the solar cells and provided the elemental analysis of the samples. Raman spectroscopy provided a structural fingerprint and helped to evaluate the influence of induced degradation methods. Variations of morphology and composition were compared, detected and well-observed. Furthermore, electrical measurements proved the solar cells to be stable under temperature stresses.

Citovat

PAPEZ, N.; D. SOBOLA; L. SKVARENINA; P. SKARVADA; Dušan HEMZAL; P. TOFEL a L. GRMELA. Degradation analysis of GaAs solar cells at thermal stress. Applied Surface Science. AMSTERDAM: Elsevier Science BV, 2018, roč. 461, 15 December 2018, s. 212-220. ISSN 0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2018.05.093.

@article{1479276,
   author = {Papez, N. and Sobola, D. and Skvarenina, L. and Skarvada, P. and Hemzal, Dušan and Tofel, P. and Grmela, L.},
   article_location = {AMSTERDAM},
   article_number = {15 December 2018},
   doi = {http://dx.doi.org/10.1016/j.apsusc.2018.05.093},
   keywords = {GaAs; Solar cells; SEM; EDS; EDX; AFM; Noise; Infrared camera; I-V characteristics},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Degradation analysis of GaAs solar cells at thermal stress},
   url = {http://dx.doi.org/10.1016/j.apsusc.2018.05.093},
   volume = {461},
   year = {2018}
}

TY  - JOUR
ID  - 1479276
AU  - Papez, N. - Sobola, D. - Skvarenina, L. - Skarvada, P. - Hemzal, Dušan - Tofel, P. - Grmela, L.
PY  - 2018
TI  - Degradation analysis of GaAs solar cells at thermal stress
JF  - Applied Surface Science
VL  - 461
IS  - 15 December 2018
SP  - 212-220
EP  - 212-220
PB  - Elsevier Science BV
SN  - 01694332
KW  - GaAs
KW  - Solar cells
KW  - SEM
KW  - EDS
KW  - EDX
KW  - AFM
KW  - Noise
KW  - Infrared camera
KW  - I-V characteristics
UR  - http://dx.doi.org/10.1016/j.apsusc.2018.05.093
N2  - The work focuses on the study of structure stability and electrical parameters of photovoltaic cells based on GaAs with Ge substrate. Solar cells of this type are used especially in adverse environments such as space applications, so their working parameters should be stable even under extreme operating conditions. Changes of electrical characteristics of the cells were recorded in the form of noise measurements for examination of distinctions in the pn-junction. Current-voltage characteristics under the light illumination and in the dark environment for comparison of the cells performance were also measured. Infrared camera showed the thermal irradiation of the stressed and damaged parts and support to localize the defected areas. Atomic force microscope (AFM) was applied for observation of changes in three-dimensional topography with high resolution. Scanning electron microscope (SEM) with energy-dispersive X-ray spectroscopy (EDS) showed morphology of the solar cells and provided the elemental analysis of the samples. Raman spectroscopy provided a structural fingerprint and helped to evaluate the influence of induced degradation methods. Variations of morphology and composition were compared, detected and well-observed. Furthermore, electrical measurements proved the solar cells to be stable under temperature stresses.
ER  -

PAPEZ, N.; D. SOBOLA; L. SKVARENINA; P. SKARVADA; Dušan HEMZAL; P. TOFEL a L. GRMELA. Degradation analysis of GaAs solar cells at thermal stress. \textit{Applied Surface Science}. AMSTERDAM: Elsevier Science BV, 2018, roč.~461, 15 December 2018, s.~212-220. ISSN~0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2018.05.093.

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