Determination of thicknesses and temperatures of crystalline
silicon wafers from optical measurements in the far infrared
region

J 2018

Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

FRANTA, Daniel, Pavel FRANTA, Jiří VOHÁNKA, Martin ČERMÁK, Ivan OHLÍDAL et. al.

Základní údaje

Originální název

Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

Autoři

FRANTA, Daniel (203 Česká republika, garant, domácí), Pavel FRANTA (203 Česká republika, domácí), Jiří VOHÁNKA (203 Česká republika, domácí), Martin ČERMÁK (203 Česká republika, domácí) a Ivan OHLÍDAL (203 Česká republika, domácí)

Vydání

Journal of Applied Physics, 2018, 0021-8979

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.328

Kód RIV

RIV/00216224:14310/18:00106358

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1063/1.5026195

UT WoS

000432331100037

Klíčová slova anglicky

optical constants; temperature dependence

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 23. 4. 2024 14:14, Mgr. Michal Petr

Anotace

V originále

Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for determination of their thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.

Návaznosti

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

FRANTA, Daniel, Pavel FRANTA, Jiří VOHÁNKA, Martin ČERMÁK a Ivan OHLÍDAL. Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region. Journal of Applied Physics. 2018, roč. 123, č. 18, s. 185707-185717. ISSN 0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.5026195.

@article{1501220,
   author = {Franta, Daniel and Franta, Pavel and Vohánka, Jiří and Čermák, Martin and Ohlídal, Ivan},
   article_number = {18},
   doi = {http://dx.doi.org/10.1063/1.5026195},
   keywords = {optical constants; temperature dependence},
   language = {eng},
   issn = {0021-8979},
   journal = {Journal of Applied Physics},
   title = {Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region},
   url = {http://dx.doi.org/10.1063/1.5026195},
   volume = {123},
   year = {2018}
}

TY  - JOUR
ID  - 1501220
AU  - Franta, Daniel - Franta, Pavel - Vohánka, Jiří - Čermák, Martin - Ohlídal, Ivan
PY  - 2018
TI  - Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region
JF  - Journal of Applied Physics
VL  - 123
IS  - 18
SP  - 185707
EP  - 185707
SN  - 00218979
KW  - optical constants
KW  - temperature dependence
UR  - http://dx.doi.org/10.1063/1.5026195
N2  - Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for determination of their thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.
ER  -

FRANTA, Daniel, Pavel FRANTA, Jiří VOHÁNKA, Martin ČERMÁK a Ivan OHLÍDAL. Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region. \textit{Journal of Applied Physics}. 2018, roč.~123, č.~18, s.~185707-185717. ISSN~0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.5026195.

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