Measurement of doping profiles by a contactless method of IR
reflectance under grazing incidence

J 2018

Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence

HOLOVSKÝ, Jakub; Zdeněk REMEŠ; Aleš PORUBA; Daniel FRANTA; Briana CONRAD et. al.

Basic information

Original name

Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence

Authors

HOLOVSKÝ, Jakub (203 Czech Republic); Zdeněk REMEŠ (203 Czech Republic); Aleš PORUBA (203 Czech Republic); Daniel FRANTA (203 Czech Republic, guarantor, belonging to the institution); Briana CONRAD (203 Czech Republic); Lucie ABELOVÁ and David BUŠEK

Edition

Review of Scientific Instruments, 2018, 0034-6748

Other information

Language

English

Type of outcome

Article in a journal

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

is not subject to a state or trade secret

References:

URL

Impact factor

Impact factor: 1.587

RIV identification code

RIV/00216224:14310/18:00106359

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1063/1.5015988

UT WoS

000437195200014

EID Scopus

2-s2.0-85048681137

Keywords in English

IR reflectance; doping; semiconductors

Abstract

In the original language

An improved contactless method of the measurement and evaluation of charge carrier profiles in polished wafers by infrared reflectance was developed. The sensitivity of optical reflectance to the incidence angle was theoretically analyzed. A grazing incident angle enhances sensitivity to doping profile parameters. At the same time, the sensitivity to experimental errors sharply increases around the Brewster angle. Therefore, the optimal angle of 65 was chosen. Experimental errors such as unintentional polarization of the measurement beam were minimized by division by reference spectra taken on an undoped sample and further by normalization to a fixed value in the region of 4000 cm1 to 7000 cm1. The carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumptions. As a physical model, the Drude equation is used with two parameters assumed to be concentration-dependent: relaxation time and contribution from band-to-band excitations. The model parameters were calibrated independently by infrared ellipsometry. The presented method gives results in satisfactory agreement with the profiles measured by the electrochemical capacitance-voltage method.

Cite

HOLOVSKÝ, Jakub; Zdeněk REMEŠ; Aleš PORUBA; Daniel FRANTA; Briana CONRAD; Lucie ABELOVÁ and David BUŠEK. Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence. Review of Scientific Instruments. 2018, vol. 89, No 6, p. 063114-63119. ISSN 0034-6748. Available from: https://dx.doi.org/10.1063/1.5015988.

@article{1501223,
   author = {Holovský, Jakub and Remeš, Zdeněk and Poruba, Aleš and Franta, Daniel and Conrad, Briana and Abelová, Lucie and Bušek, David},
   article_number = {6},
   doi = {http://dx.doi.org/10.1063/1.5015988},
   keywords = {IR reflectance; doping; semiconductors},
   language = {eng},
   issn = {0034-6748},
   journal = {Review of Scientific Instruments},
   title = {Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence},
   url = {http://dx.doi.org/10.1063/1.5015988},
   volume = {89},
   year = {2018}
}

TY  - JOUR
ID  - 1501223
AU  - Holovský, Jakub - Remeš, Zdeněk - Poruba, Aleš - Franta, Daniel - Conrad, Briana - Abelová, Lucie - Bušek, David
PY  - 2018
TI  - Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence
JF  - Review of Scientific Instruments
VL  - 89
IS  - 6
SP  - 063114
EP  - 063114
SN  - 00346748
KW  - IR reflectance
KW  - doping
KW  - semiconductors
UR  - http://dx.doi.org/10.1063/1.5015988
N2  - An improved contactless method of the measurement and evaluation of charge carrier profiles in polished wafers by infrared reflectance was developed. The sensitivity of optical reflectance to the incidence angle was theoretically analyzed. A grazing incident angle enhances sensitivity to doping profile parameters. At the same time, the sensitivity to experimental errors sharply increases around the Brewster angle. Therefore, the optimal angle of 65 was chosen. Experimental errors such as unintentional polarization of the measurement beam were minimized by division by reference spectra taken on an undoped sample and further by normalization to a fixed value in the region of 4000 cm1 to 7000 cm1. The carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumptions. As a physical model, the Drude equation is used with two parameters assumed to be concentration-dependent: relaxation time and contribution from band-to-band excitations. The model parameters were calibrated independently by infrared ellipsometry. The presented method gives results in satisfactory agreement with the profiles measured by the electrochemical capacitance-voltage method.
ER  -

HOLOVSKÝ, Jakub; Zdeněk REMEŠ; Aleš PORUBA; Daniel FRANTA; Briana CONRAD; Lucie ABELOVÁ and David BUŠEK. Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence. \textit{Review of Scientific Instruments}. 2018, vol.~89, No~6, p.~063114-63119. ISSN~0034-6748. Available from: https://dx.doi.org/10.1063/1.5015988.

Přehled o publikaci