PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS
APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

D 2018

PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

GABLECH, I.; Ondřej CAHA; V. SVATOŠ; J. PRÁŠEK; J. PEKÁREK et al.

Základní údaje

Originální název

PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

Autoři

GABLECH, I.; Ondřej CAHA; V. SVATOŠ; J. PRÁŠEK; J. PEKÁREK; P. NEUŽIL a Tomáš ŠIKOLA

Vydání

SLEZSKA, 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017), od s. 117-122, 6 s. 2018

Nakladatel

TANGER LTD

Další údaje

Jazyk

angličtina

Typ výsledku

Stať ve sborníku

Obor

10302 Condensed matter physics

Utajení

není předmětem státního či obchodního tajemství

Forma vydání

tištěná verze "print"

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/18:00106417

Organizační jednotka

Přírodovědecká fakulta

ISBN

978-80-87294-81-9

UT WoS

000452823300018

Klíčová slova anglicky

Titanium thin film; [001] orientation; stress-free; thermal coefficient of resistivity; resistivity

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 1. 3. 2019 11:29, doc. Mgr. Ondřej Caha, Ph.D.

Anotace

V originále

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of approximate to 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (rho) and the thermal coefficient of resistivity (alpha) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of approximate to 273 degrees C. The corresponding lattice parameters a(0) and c(0) were (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. Electrical parameters of this sample as rho and alpha were (9.2 +/- 0.1).10(-7) Omega.m and (2.6 +/- 0.2).10(-3) K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low rho and high alpha are essential. We found that rho and a are dependent on each other. The rho value was approximate to 2x higher than the bulk material value, which is an excellent result for a thin film with the thickness of approximate to 80 nm.

Návaznosti

LM2015041, projekt VaV

Název: CEITEC Nano

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC Nano

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

GABLECH, I.; Ondřej CAHA; V. SVATOŠ; J. PRÁŠEK; J. PEKÁREK; P. NEUŽIL a Tomáš ŠIKOLA. PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE. In 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017). SLEZSKA: TANGER LTD, 2018, s. 117-122. ISBN 978-80-87294-81-9.

@inproceedings{1502059,
   author = {Gablech, I. and Caha, Ondřej and Svatoš, V. and Prášek, J. and Pekárek, J. and Neužil, P. and Šikola, Tomáš},
   address = {SLEZSKA},
   booktitle = {9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017)},
   keywords = {Titanium thin film; [001] orientation; stress-free; thermal coefficient of resistivity; resistivity},
   howpublished = {tištěná verze "print"},
   language = {eng},
   location = {SLEZSKA},
   isbn = {978-80-87294-81-9},
   pages = {117-122},
   publisher = {TANGER LTD},
   title = {PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE},
   year = {2018}
}

TY  - CONF
ID  - 1502059
AU  - Gablech, I. - Caha, Ondřej - Svatoš, V. - Prášek, J. - Pekárek, J. - Neužil, P. - Šikola, Tomáš
PY  - 2018
TI  - PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE
PB  - TANGER LTD
CY  - SLEZSKA
SN  - 9788087294819
KW  - Titanium thin film
KW  - [001] orientation
KW  - stress-free
KW  - thermal coefficient of resistivity
KW  - resistivity
N2  - We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of approximate to 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (rho) and the thermal coefficient of resistivity (alpha) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of approximate to 273 degrees C. The corresponding lattice parameters a(0) and c(0) were (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. Electrical parameters of this sample as rho and alpha were (9.2 +/- 0.1).10(-7) Omega.m and (2.6 +/- 0.2).10(-3) K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low rho and high alpha are essential. We found that rho and a are dependent on each other. The rho value was approximate to 2x higher than the bulk material value, which is an excellent result for a thin film with the thickness of approximate to 80 nm.
ER  -

GABLECH, I.; Ondřej CAHA; V. SVATOŠ; J. PRÁŠEK; J. PEKÁREK; P. NEUŽIL a Tomáš ŠIKOLA. PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE. In \textit{9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH \&{}amp; APPLICATION (NANOCON 2017)}. SLEZSKA: TANGER LTD, 2018, s.~117-122. ISBN~978-80-87294-81-9.

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