Temperature dependent dispersion models applicable in solid
state physics

J 2019

Temperature dependent dispersion models applicable in solid state physics

FRANTA, Daniel; Jiří VOHÁNKA; Martin ČERMÁK; Pavel FRANTA; Ivan OHLÍDAL et al.

Základní údaje

Originální název

Temperature dependent dispersion models applicable in solid state physics

Autoři

FRANTA, Daniel; Jiří VOHÁNKA; Martin ČERMÁK; Pavel FRANTA a Ivan OHLÍDAL

Vydání

Journal of Electrical Engineering, Slovenská technická univezita v Bratislavě, 2019, 1335-3632

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Slovensko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 0.686

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/19:00111216

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

temperature dependent dielectrics dispersion model;Kramers-Kronig relation;crystalline silicon

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 26. 3. 2020 13:14, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Dispersion models are necessary for precise determination of the dielectric response of materials used in optical and microelectronics industry. Although the study of the dielectric response is often limited only to the dependence of the optical constants on frequency, it is also important to consider its dependence on other quantities characterizing the state of the system. One of the most important quantities determining the state of the condensed matter in equilibrium is temperature. Introducing temperature dependence into dispersion models is quite challenging. A physically correct model of dielectric response must respect three fundamental and one supplementary conditions imposed on the dielectric function. The three fundamental conditions are the time-reversal symmetry, Kramers-Kronig consistency and sum rule. These three fundamental conditions are valid for any material in any state. For systems in equilibrium there is also a supplementary dissipative condition. In this contribution it will be shown how these conditions can be applied in the construction of temperature dependent dispersion models. Practical results will be demonstrated on the temperature dependent dispersion model of crystalline silicon.

Návaznosti

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

FRANTA, Daniel; Jiří VOHÁNKA; Martin ČERMÁK; Pavel FRANTA a Ivan OHLÍDAL. Temperature dependent dispersion models applicable in solid state physics. Journal of Electrical Engineering. Slovenská technická univezita v Bratislavě, 2019, roč. 70, č. 7, s. 1-15. ISSN 1335-3632. Dostupné z: https://doi.org/10.2478/jee-2019-0036.

@article{1577498,
   author = {Franta, Daniel and Vohánka, Jiří and Čermák, Martin and Franta, Pavel and Ohlídal, Ivan},
   article_number = {7},
   doi = {https://doi.org/10.2478/jee-2019-0036},
   keywords = {temperature dependent dielectrics dispersion model;Kramers-Kronig relation;crystalline silicon},
   language = {eng},
   issn = {1335-3632},
   journal = {Journal of Electrical Engineering},
   title = {Temperature dependent dispersion models applicable in solid state physics},
   url = {https://doi.org/10.2478/jee-2019-0036},
   volume = {70},
   year = {2019}
}

TY  - JOUR
ID  - 1577498
AU  - Franta, Daniel - Vohánka, Jiří - Čermák, Martin - Franta, Pavel - Ohlídal, Ivan
PY  - 2019
TI  - Temperature dependent dispersion models applicable in solid state physics
JF  - Journal of Electrical Engineering
VL  - 70
IS  - 7
SP  - 1-15
EP  - 1-15
PB  - Slovenská technická univezita v Bratislavě
SN  - 13353632
KW  - temperature dependent dielectrics dispersion model;Kramers-Kronig relation;crystalline silicon
UR  - https://doi.org/10.2478/jee-2019-0036
L2  - https://doi.org/10.2478/jee-2019-0036
N2  - Dispersion models are necessary for precise determination of the dielectric response of materials used in optical and microelectronics industry. Although the study of the dielectric response is often limited only to the dependence of the optical constants on frequency, it is also important to consider its dependence on other quantities characterizing the state of the system. One of the most important quantities determining the state of the condensed matter in equilibrium is temperature. Introducing temperature dependence into dispersion models is quite challenging. A physically correct model of dielectric response must respect three fundamental and one supplementary conditions imposed on the dielectric function. The three fundamental conditions are the time-reversal symmetry, Kramers-Kronig consistency and sum rule. These three fundamental conditions are valid for any material in any state. For systems in equilibrium there is also a supplementary dissipative condition. In this contribution it will be shown how these conditions can be applied in the construction of temperature dependent dispersion models. Practical results will be demonstrated on the temperature dependent dispersion model of crystalline silicon.
ER  -

FRANTA, Daniel; Jiří VOHÁNKA; Martin ČERMÁK; Pavel FRANTA a Ivan OHLÍDAL. Temperature dependent dispersion models applicable in solid state physics. \textit{Journal of Electrical Engineering}. Slovenská technická univezita v Bratislavě, 2019, roč.~70, č.~7, s.~1-15. ISSN~1335-3632. Dostupné z: https://doi.org/10.2478/jee-2019-0036.

Přehled o publikaci