Tuning of the valence band mixing of excitons confined in
GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic
strain

J 2013

Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

PLUMHOF, JD.; R. TROTTA; Vlastimil KŘÁPEK; E. ZALLO; P. ATKINSON et al.

Základní údaje

Originální název

Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

Autoři

PLUMHOF, JD.; R. TROTTA; Vlastimil KŘÁPEK; E. ZALLO; P. ATKINSON; S. KUMAR; A. RASTELLI a OG. SCHMIDT

Vydání

Physical Review B, COLLEGE PK, The American Physical Society, 2013, 1098-0121

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10300 1.3 Physical sciences

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

Full Text

Impakt faktor

Impact factor: 3.664

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/13:00107017

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

SINGLE-HOLE SPIN

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 30. 4. 2020 10:17, Mgr. Michal Petr

Anotace

V originále

This work presents an experimental method to tune the degree of heavy-hole (HH) and light-hole (LH) mixing of the ground state of quantum dots (QDs). A ferroelectric crystal is used to apply reversible anisotropic biaxial stress to thin nanomembranes, containing GaAs/AlGaAs QDs. The stress-induced modification of the QD anisotropy leads to a change of the relative intensity of the two emission lines produced by the recombination of neutral bright excitonic states. Such a change is ascribed to a variation of the degree of HH-LH mixing. At the same time the modified anisotropy produces a change of the excitonic fine structure splitting (FSS). Model calculations provide a qualitative insight into the relation between strain, HH-LH mixing, and the FSS in epitaxial GaAs/AlGaAs QDs.

Návaznosti

GA202/09/0676, projekt VaV

Název: Vliv krycích vrstev na elektronové stavy v kvantových tečkách

Investor: Grantová agentura ČR, Vliv krycích vrstev na elektronové stavy v kvantových tečkách

Citovat

PLUMHOF, JD.; R. TROTTA; Vlastimil KŘÁPEK; E. ZALLO; P. ATKINSON; S. KUMAR; A. RASTELLI a OG. SCHMIDT. Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain. Physical Review B. COLLEGE PK: The American Physical Society, 2013, roč. 87, č. 7, s. 1-5. ISSN 1098-0121. Dostupné z: https://doi.org/10.1103/PhysRevB.87.075311.

@article{1589839,
   author = {Plumhof, JD. and Trotta, R. and Křápek, Vlastimil and Zallo, E. and Atkinson, P. and Kumar, S. and Rastelli, A. and Schmidt, OG.},
   article_location = {COLLEGE PK},
   article_number = {7},
   doi = {https://doi.org/10.1103/PhysRevB.87.075311},
   keywords = {SINGLE-HOLE SPIN},
   language = {eng},
   issn = {1098-0121},
   journal = {Physical Review B},
   title = {Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain},
   url = {https://journals.aps.org/prb/pdf/10.1103/PhysRevB.87.075311},
   volume = {87},
   year = {2013}
}

TY  - JOUR
ID  - 1589839
AU  - Plumhof, JD. - Trotta, R. - Křápek, Vlastimil - Zallo, E. - Atkinson, P. - Kumar, S. - Rastelli, A. - Schmidt, OG.
PY  - 2013
TI  - Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain
JF  - Physical Review B
VL  - 87
IS  - 7
SP  - 1-5
EP  - 1-5
PB  - The American Physical Society
SN  - 10980121
KW  - SINGLE-HOLE SPIN
UR  - https://journals.aps.org/prb/pdf/10.1103/PhysRevB.87.075311
L2  - https://journals.aps.org/prb/pdf/10.1103/PhysRevB.87.075311
N2  - This work presents an experimental method to tune the degree of heavy-hole (HH) and light-hole (LH) mixing of the ground state of quantum dots (QDs). A ferroelectric crystal is used to apply reversible anisotropic biaxial stress to thin nanomembranes, containing GaAs/AlGaAs QDs. The stress-induced modification of the QD anisotropy leads to a change of the relative intensity of the two emission lines produced by the recombination of neutral bright excitonic states. Such a change is ascribed to a variation of the degree of HH-LH mixing. At the same time the modified anisotropy produces a change of the excitonic fine structure splitting (FSS). Model calculations provide a qualitative insight into the relation between strain, HH-LH mixing, and the FSS in epitaxial GaAs/AlGaAs QDs.
ER  -

PLUMHOF, JD.; R. TROTTA; Vlastimil KŘÁPEK; E. ZALLO; P. ATKINSON; S. KUMAR; A. RASTELLI a OG. SCHMIDT. Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain. \textit{Physical Review B}. COLLEGE PK: The American Physical Society, 2013, roč.~87, č.~7, s.~1-5. ISSN~1098-0121. Dostupné z: https://doi.org/10.1103/PhysRevB.87.075311.

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