J 2014

Laser desorption ionization time-of-flight mass spectrometry of erbium-doped Ga-Ge-Sb-S glasses

PANGAVHANE, Sachinkumar Dagurao, Petr NEMEC, Virginie NAZABAL, Alain MOREAC, Pal JOVARI et. al.

Základní údaje

Originální název

Laser desorption ionization time-of-flight mass spectrometry of erbium-doped Ga-Ge-Sb-S glasses

Autoři

PANGAVHANE, Sachinkumar Dagurao (356 Indie, domácí), Petr NEMEC, Virginie NAZABAL, Alain MOREAC, Pal JOVARI a Josef HAVEL (203 Česká republika, domácí)

Vydání

Rapid Communications in Mass Spectrometry, Hoboken, WILEY-BLACKWELL, 2014, 0951-4198

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10608 Biochemistry and molecular biology

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

Impakt faktor

Impact factor: 2.253

Organizační jednotka

Přírodovědecká fakulta

UT WoS

000337510800007

Klíčová slova anglicky

LANTHANUM SULFIDE GLASS; CHALCOGENIDE GLASSES; OPTICAL-PROPERTIES; MID-IR; ABLATION SYNTHESIS; MU-M; FIBER; SPECTROSCOPY; CLUSTERS; SYSTEM

Štítky

Příznaky

Mezinárodní význam, Recenzováno
Změněno: 19. 6. 2020 13:59, Mgr. Marie Šípková, DiS.

Anotace

V originále

RATIONALE Rare earth-doped sulphide glasses in the Ga-Ge-Sb-S system present radiative emissions from the visible to the middle infrared range (mid-IR) range, which are of interest for a variety of applications including (bio)-chemical optical sensing, light detection, and military counter-measures. The aim of this work was to reveal structural motifs present during the fabrication of thin films by plasma deposition techniques as such knowledge is important for the optimization of thin film growth. METHODS The formation of clusters in plasma plume from different concentrations of erbium-doped Ga5Ge20Sb10S65 glasses (0.05, 0.1, and 0.5 wt. % of erbium) using laser (337 nm) desorption ionization (LDI) was studied by time-of-flight mass spectrometry (TOF MS) in both positive and negative ion mode. The stoichiometry of the GamGenSboSp+/- clusters was determined via isotopic envelope analysis and computer modelling. RESULTS Several GamGenSboSp+/- singly charged clusters were found but, surprisingly, only four species (Sb3S4+/-, GaSb2Sp+/- (p = 4, 5), Ga3Sb2S7+/-) were common to both ion modes. For the first time, species containing rare earths (GaSb2SEr+ and GaS6Er2+) were identified in the plasma formed from rare earth-doped chalcogenide glasses, directly confirming the importance of gallium presence for rare earth bonding within the glassy matrix. CONCLUSIONS The local structure of Ga-Ge-Sb-S glasses is at least partly different from the structure of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis; these glasses are mainly formed by [GeS4/2]/[GaS4/2] tetrahedra and [SbS3/2] pyramids. Extended X-ray absorption fine structure measurements show that Er3+ ions in Ga-Ge-Sb-S glasses are surrounded by 7 sulphur atoms.

Návaznosti

ED2.1.00/03.0086, projekt VaV
Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
GA13-05082S, projekt VaV
Název: Analýza a aplikace plazmatických procesů pro přípravu tenkých vrstev amorfních chalkogenidů
Investor: Grantová agentura ČR, Analýza a aplikace plazmatických procesů pro přípravu tenkých vrstev amorfních chalkogenidů