2020
Spectroscopic ellipsometry of inhomogeneous thin films exhibiting thickness non-uniformity and transition layers
OHLÍDAL, Ivan, Jiří VOHÁNKA, Vilma BURŠÍKOVÁ, Daniel FRANTA, Martin ČERMÁK et. al.Základní údaje
Originální název
Spectroscopic ellipsometry of inhomogeneous thin films exhibiting thickness non-uniformity and transition layers
Autoři
OHLÍDAL, Ivan (203 Česká republika, garant, domácí), Jiří VOHÁNKA (203 Česká republika, domácí), Vilma BURŠÍKOVÁ (203 Česká republika, domácí), Daniel FRANTA (203 Česká republika, domácí) a Martin ČERMÁK (203 Česká republika, domácí)
Vydání
Optics Express, Washington, D.C. OPTICAL SOC AMER, 2020, 1094-4087
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10306 Optics
Stát vydavatele
Spojené státy
Utajení
není předmětem státního či obchodního tajemství
Odkazy
Impakt faktor
Impact factor: 3.894
Kód RIV
RIV/00216224:14310/20:00114013
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000509352500012
Klíčová slova anglicky
Amorphous silicon; Extinction coefficients; Light scattering; Optical constants; Refractive index; Thin films
Štítky
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 30. 3. 2021 16:00, Mgr. Marie Šípková, DiS.
Anotace
V originále
In this paper the complete optical characterization of an inhomogeneous polymer-like thin film of SiOxCyHz exhibiting a thickness non-uniformity and transition layer at the boundary between the silicon substrate and this film is performed using variable angle spectroscopic ellipsometry. The Campi-Coriasso dispersion model was utilized for describing the spectral dependencies of the optical constants of the SiOxCyHz thin film and transition layer. The multiple-beam interference model was used for expressing inhomogeneity of the SiOxCyHz thin film. The thickness non-uniformity of this film was taken into account by means of the averaging of the elements of the Mueller matrix performed using the thickness distribution for the wedge-shaped non-uniformity. The spectral dependencies of the optical constants of the SiOxCyHz thin film at the upper and lower boundaries together with the spectral dependencies of the optical constants of the transition layer were determined. Furthermore, the thickness values of the SiOxCyHz film and transition layer, profiles of the optical constants of the SiOxCyHz thin film and the rms value of local thicknesses corresponding to its thickness non-uniformity were determined. Thus, all the parameters characterizing this complicated film were determined without any auxiliary methods.
Návaznosti
GA19-15240S, projekt VaV |
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LO1411, projekt VaV |
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