2020
Sputtered titanium species dynamics in HiPIMS
HNILICA, Jaroslav; Nikolay BRITUN; Peter KLEIN; Rony SNYDERS; Petr VAŠINA et al.Základní údaje
Originální název
Sputtered titanium species dynamics in HiPIMS
Autoři
Vydání
Workshop on Plasma-Based Synthesis of Nanomaterials, 2020
Další údaje
Jazyk
angličtina
Typ výsledku
Konferenční abstrakt
Obor
10305 Fluids and plasma physics
Stát vydavatele
Česká republika
Utajení
není předmětem státního či obchodního tajemství
Označené pro přenos do RIV
Ne
Organizační jednotka
Přírodovědecká fakulta
Klíčová slova anglicky
titanium species; HiPIMS; AAS; LIF
Příznaky
Mezinárodní význam
Změněno: 29. 4. 2021 18:57, Mgr. Marie Novosadová Šípková, DiS.
Anotace
V originále
High power impulse magnetron sputtering (HiPIMS) is a very attractive physical vapor deposition technique, which has been of great interest over the last two decades. Continuous development of the HiPIMS-based sputtering discharges is tightly related to the more profound understanding of the undergoing physical processes, a crucial factor for the optimization of thin-film growth as well as for further development of sputtering technology in general. In our experiments, various optical diagnostic methods for in-situ characterization of HiPIMS discharges was combined. Special attention was dedicated to the visualization of the ground state titanium neutrals and ions in the discharge volume above the cathode. Their direct imaging is a straightforward way to obtain information about their number density. Two-dimensional time-resolved density mapping of the sputtered species in a HiPIMS plasma was performed utilizing laser-induced fluorescence (LIF) technique. Atomic absorption spectroscopy (AAS) measurements were employed in parallel to LIF to follow the number density evolution of sputtered species. Both methods LIF and AAS were used to investigate the effects such as plasma on-time, plasma off-time, working gas pressure, pulse energy, or oxygen admixture on number density evolution of sputtered species.
Návaznosti
| GA19-00579S, projekt VaV |
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