2019
Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study
MAWALE, Ravi, Govinda MANDAL, Marek BOUŠKA, Jan GUTWIRTH, Pankaj Lochan BORA et. al.Základní údaje
Originální název
Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study
Autoři
MAWALE, Ravi (356 Indie), Govinda MANDAL (524 Nepál, domácí), Marek BOUŠKA (203 Česká republika), Jan GUTWIRTH (203 Česká republika), Pankaj Lochan BORA (356 Indie, domácí), Virginie NAZABAL (203 Česká republika), Josef HAVEL (203 Česká republika, domácí) a Petr NĚMEC (203 Česká republika, garant)
Vydání
Scientific Reports, London, NATURE PUBLISHING GROUP, 2019, 2045-2322
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10406 Analytical chemistry
Stát vydavatele
Velká Británie a Severní Irsko
Utajení
není předmětem státního či obchodního tajemství
Odkazy
Impakt faktor
Impact factor: 3.998
Kód RIV
RIV/00216224:14310/19:00108152
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000503187500003
Klíčová slova anglicky
Mass spectrometry
Štítky
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 2. 3. 2020 16:19, Mgr. Marie Šípková, DiS.
Anotace
V originále
LA with TOFMS analysis of thin films as well as elemental mixtures of Ge-Bi-Se system produces many unary, binary and some ternary clusters. The thin films were prepared via rf magnetron co-sputtering using GeSe2 and Bi2Se3 targets. Six different compositions of thin films were examined, each one producing about 20 different positively and negatively charged clusters. These might be considered as fragments of local structure of studied materials that are present in plasma during thin films deposition. On the other hand, in the case of the elemental mixtures, a higher number (about 28) of clusters were generated at lower laser energy. Finally, structures of some selected binary and ternary clusters were calculated using DFT optimization. In conclusion, laser ablation time-of-flight mass spectrometry is considered as a useful analytical technique to study amorphous chalcogenide thin films in terms of identification of species present in the plasma phase when the material is exposed to laser pulses. The knowledge of stoichiometry of the species might help to obtain partial structural information of the thin films. Laser ablation of thin films and knowledge of plasma based on TOFMS analysis can also be generally helpful in understanding specific industrial processes such as laser surface treatment and laser additive manufacturing.
Návaznosti
GA18-03823S, projekt VaV |
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