Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

J 2019

Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

MAWALE, Ravi; Govinda MANDAL; Marek BOUŠKA; Jan GUTWIRTH; Pankaj Lochan BORA et al.

Základní údaje

Originální název

Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

Autoři

MAWALE, Ravi; Govinda MANDAL; Marek BOUŠKA; Jan GUTWIRTH; Pankaj Lochan BORA; Virginie NAZABAL; Josef HAVEL a Petr NĚMEC

Vydání

Scientific Reports, London, NATURE PUBLISHING GROUP, 2019, 2045-2322

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10406 Analytical chemistry

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

Full Text

Impakt faktor

Impact factor: 3.998

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/19:00108152

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Mass spectrometry

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 2. 3. 2020 16:19, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

LA with TOFMS analysis of thin films as well as elemental mixtures of Ge-Bi-Se system produces many unary, binary and some ternary clusters. The thin films were prepared via rf magnetron co-sputtering using GeSe2 and Bi2Se3 targets. Six different compositions of thin films were examined, each one producing about 20 different positively and negatively charged clusters. These might be considered as fragments of local structure of studied materials that are present in plasma during thin films deposition. On the other hand, in the case of the elemental mixtures, a higher number (about 28) of clusters were generated at lower laser energy. Finally, structures of some selected binary and ternary clusters were calculated using DFT optimization. In conclusion, laser ablation time-of-flight mass spectrometry is considered as a useful analytical technique to study amorphous chalcogenide thin films in terms of identification of species present in the plasma phase when the material is exposed to laser pulses. The knowledge of stoichiometry of the species might help to obtain partial structural information of the thin films. Laser ablation of thin films and knowledge of plasma based on TOFMS analysis can also be generally helpful in understanding specific industrial processes such as laser surface treatment and laser additive manufacturing.

Návaznosti

GA18-03823S, projekt VaV

Název: Pokročilé metody přípravy tenkých vrstev chalkogenidů a jejich modifikace

Investor: Grantová agentura ČR, Pokročilé metody přípravy tenkých vrstev chalkogenidů a jejich modifikace

Citovat

MAWALE, Ravi; Govinda MANDAL; Marek BOUŠKA; Jan GUTWIRTH; Pankaj Lochan BORA; Virginie NAZABAL; Josef HAVEL a Petr NĚMEC. Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study. Scientific Reports. London: NATURE PUBLISHING GROUP, 2019, roč. 9, DEC, s. 1-10. ISSN 2045-2322. Dostupné z: https://doi.org/10.1038/s41598-019-55773-9.

@article{1622358,
   author = {Mawale, Ravi and Mandal, Govinda and Bouška, Marek and Gutwirth, Jan and Bora, Pankaj Lochan and Nazabal, Virginie and Havel, Josef and Němec, Petr},
   article_location = {London},
   article_number = {DEC},
   doi = {https://doi.org/10.1038/s41598-019-55773-9},
   keywords = {Mass spectrometry},
   language = {eng},
   issn = {2045-2322},
   journal = {Scientific Reports},
   title = {Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study},
   url = {https://www.nature.com/articles/s41598-019-55773-9#citeas},
   volume = {9},
   year = {2019}
}

TY  - JOUR
ID  - 1622358
AU  - Mawale, Ravi - Mandal, Govinda - Bouška, Marek - Gutwirth, Jan - Bora, Pankaj Lochan - Nazabal, Virginie - Havel, Josef - Němec, Petr
PY  - 2019
TI  - Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study
JF  - Scientific Reports
VL  - 9
IS  - DEC
SP  - 1-10
EP  - 1-10
PB  - NATURE PUBLISHING GROUP
SN  - 20452322
KW  - Mass spectrometry
UR  - https://www.nature.com/articles/s41598-019-55773-9#citeas
L2  - https://www.nature.com/articles/s41598-019-55773-9#citeas
N2  - LA with TOFMS analysis of thin films as well as elemental mixtures of Ge-Bi-Se system produces many unary, binary and some ternary clusters. The thin films were prepared via rf magnetron co-sputtering using GeSe2 and Bi2Se3 targets. Six different compositions of thin films were examined, each one producing about 20 different positively and negatively charged clusters. These might be considered as fragments of local structure of studied materials that are present in plasma during thin films deposition. On the other hand, in the case of the elemental mixtures, a higher number (about 28) of clusters were generated at lower laser energy. Finally, structures of some selected binary and ternary clusters were calculated using DFT optimization. In conclusion, laser ablation time-of-flight mass spectrometry is considered as a useful analytical technique to study amorphous chalcogenide thin films in terms of identification of species present in the plasma phase when the material is exposed to laser pulses. The knowledge of stoichiometry of the species might help to obtain partial structural information of the thin films. Laser ablation of thin films and knowledge of plasma based on TOFMS analysis can also be generally helpful in understanding specific industrial processes such as laser surface treatment and laser additive manufacturing.
ER  -

MAWALE, Ravi; Govinda MANDAL; Marek BOUŠKA; Jan GUTWIRTH; Pankaj Lochan BORA; Virginie NAZABAL; Josef HAVEL a Petr NĚMEC. Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study. \textit{Scientific Reports}. London: NATURE PUBLISHING GROUP, 2019, roč.~9, DEC, s.~1-10. ISSN~2045-2322. Dostupné z: https://doi.org/10.1038/s41598-019-55773-9.

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