Distinct defect appearance in Gd implanted polar and nonpolar
ZnO surfaces in connection to ion channeling effect

J 2019

Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

JAGEROVA, A.; P. MALINSKY; R. MIKSOVA; P. NEKVINDOVA; J. CAJZL et. al.

Základní údaje

Originální název

Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

Autoři

JAGEROVA, A.; P. MALINSKY; R. MIKSOVA; P. NEKVINDOVA; J. CAJZL; S. AKHMADALIEV; Václav HOLÝ (203 Česká republika, garant, domácí) a A. MACKOVA

Vydání

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, MELVILLE, A V S AMER INST PHYSICS, 2019, 0734-2101

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10403 Physical chemistry

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.166

Kód RIV

RIV/00216224:14740/19:00113436

Organizační jednotka

Středoevropský technologický institut

DOI

http://dx.doi.org/10.1116/1.5125320

UT WoS

000504231200023

EID Scopus

2-s2.0-85075464240

Klíčová slova anglicky

SCATTERING

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 4. 2022 08:54, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

(0001) c-plane, (11-20) a-plane, and m-plane (10-10) ZnO bulk crystals were implanted with 400-keV Gd+ ions using fluences of 5 x 10(14), 1 x 10(15), 2.5 x 10(15), and 5 x 10(15) cm(-2). Structural changes during the implantation and subsequent annealing were characterized by Rutherford back-scattering spectrometry in channeling mode (RBS-C); the angular dependence of the backscattered ions (angular scans) in c-, a-, and m-plane ZnO was realized to get insight into structural modification and dopant position in various crystallographic orientations. X-ray diffraction (XRD) with mapping in reciprocal space was also used for introduced defect identification. Defect-accumulation depth profiles exhibited differences for c-, a-, and m-plane ZnO, with the a-plane showing significantly lower accumulated disorder in the deeper layer in Zn-sublattice, accompanied by the preservation of ion channeling phenomena in a-plane ZnO. Enlargement of the main lattice parameter was evidenced, after the implantation, in all orientations. The highest was evidenced in a-plane ZnO. The local compressive deformation was seen with XRD analysis in polar (c-plane) ZnO, and the tensile deformation was observed in nonpolar ZnO (a-plane and m-plane orientations) being in agreement with RBS-C results. Raman spectroscopy showed distinct structural modification in various ZnO orientations simultaneously with identification of the disordered structure in O-sublattice. Nonpolar ZnO showed a significant increase in disorder in O-sublattice exhibited by E-2(high) disappearance and enhancement of A(1)(LO) and E-1(LO) phonons connected partially to oxygen vibrational modes. The lowering of the E-2(low) phonon mode and shift to the lower wavenumbers was observed in c-plane ZnO connected to Zn-sublattice disordering. Such observations are in agreement with He ion channeling, showing channeling effect preservation with only slight Gd dopant position modification in a-plane ZnO and the more progressive diminishing of channels with subsequent Gd movement to random position with the growing ion fluence and after the annealing in c-plane and m-plane ZnO. Published by the AVS.

Citovat

JAGEROVA, A.; P. MALINSKY; R. MIKSOVA; P. NEKVINDOVA; J. CAJZL; S. AKHMADALIEV; Václav HOLÝ a A. MACKOVA. Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. MELVILLE: A V S AMER INST PHYSICS, 2019, roč. 37, č. 6, s. 1-11. ISSN 0734-2101. Dostupné z: https://dx.doi.org/10.1116/1.5125320.

@article{1641477,
   author = {Jagerova, A. and Malinsky, P. and Miksova, R. and Nekvindova, P. and Cajzl, J. and Akhmadaliev, S. and Holý, Václav and Mackova, A.},
   article_location = {MELVILLE},
   article_number = {6},
   doi = {http://dx.doi.org/10.1116/1.5125320},
   keywords = {SCATTERING},
   language = {eng},
   issn = {0734-2101},
   journal = {JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A},
   title = {Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect},
   url = {https://avs.scitation.org/doi/10.1116/1.5125320},
   volume = {37},
   year = {2019}
}

TY  - JOUR
ID  - 1641477
AU  - Jagerova, A. - Malinsky, P. - Miksova, R. - Nekvindova, P. - Cajzl, J. - Akhmadaliev, S. - Holý, Václav - Mackova, A.
PY  - 2019
TI  - Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect
JF  - JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
VL  - 37
IS  - 6
SP  - 1-11
EP  - 1-11
PB  - A V S AMER INST PHYSICS
SN  - 07342101
KW  - SCATTERING
UR  - https://avs.scitation.org/doi/10.1116/1.5125320
L2  - https://avs.scitation.org/doi/10.1116/1.5125320
N2  - (0001) c-plane, (11-20) a-plane, and m-plane (10-10) ZnO bulk crystals were implanted with 400-keV Gd+ ions using fluences of 5 x 10(14), 1 x 10(15), 2.5 x 10(15), and 5 x 10(15) cm(-2). Structural changes during the implantation and subsequent annealing were characterized by Rutherford back-scattering spectrometry in channeling mode (RBS-C); the angular dependence of the backscattered ions (angular scans) in c-, a-, and m-plane ZnO was realized to get insight into structural modification and dopant position in various crystallographic orientations. X-ray diffraction (XRD) with mapping in reciprocal space was also used for introduced defect identification. Defect-accumulation depth profiles exhibited differences for c-, a-, and m-plane ZnO, with the a-plane showing significantly lower accumulated disorder in the deeper layer in Zn-sublattice, accompanied by the preservation of ion channeling phenomena in a-plane ZnO. Enlargement of the main lattice parameter was evidenced, after the implantation, in all orientations. The highest was evidenced in a-plane ZnO. The local compressive deformation was seen with XRD analysis in polar (c-plane) ZnO, and the tensile deformation was observed in nonpolar ZnO (a-plane and m-plane orientations) being in agreement with RBS-C results. Raman spectroscopy showed distinct structural modification in various ZnO orientations simultaneously with identification of the disordered structure in O-sublattice. Nonpolar ZnO showed a significant increase in disorder in O-sublattice exhibited by E-2(high) disappearance and enhancement of A(1)(LO) and E-1(LO) phonons connected partially to oxygen vibrational modes. The lowering of the E-2(low) phonon mode and shift to the lower wavenumbers was observed in c-plane ZnO connected to Zn-sublattice disordering. Such observations are in agreement with He ion channeling, showing channeling effect preservation with only slight Gd dopant position modification in a-plane ZnO and the more progressive diminishing of channels with subsequent Gd movement to random position with the growing ion fluence and after the annealing in c-plane and m-plane ZnO. Published by the AVS.
ER  -

JAGEROVA, A.; P. MALINSKY; R. MIKSOVA; P. NEKVINDOVA; J. CAJZL; S. AKHMADALIEV; Václav HOLÝ a A. MACKOVA. Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect. \textit{JOURNAL OF VACUUM SCIENCE \&{}amp; TECHNOLOGY A}. MELVILLE: A V S AMER INST PHYSICS, 2019, roč.~37, č.~6, s.~1-11. ISSN~0734-2101. Dostupné z: https://dx.doi.org/10.1116/1.5125320.

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