High power factor and mobility of single crystals of Bi2Se3
induced by Mo doping

J 2019

High power factor and mobility of single crystals of Bi2Se3 induced by Mo doping

CERMAK, P., P. KNOTEK, P. RULEOVA, Václav HOLÝ, K. PALKA et. al.

Základní údaje

Originální název

High power factor and mobility of single crystals of Bi2Se3 induced by Mo doping

Autoři

CERMAK, P., P. KNOTEK, P. RULEOVA, Václav HOLÝ (203 Česká republika, garant, domácí), K. PALKA, V. KUCEK, L. BENES, J. NAVRATIL a C. DRASAR

Vydání

Journal of Solid State Chemistry, San Diego, Elsevier, 2019, 0022-4596

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10403 Physical chemistry

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.726

Kód RIV

RIV/00216224:14740/19:00113439

Organizační jednotka

Středoevropský technologický institut

DOI

http://dx.doi.org/10.1016/j.jssc.2019.07.045

UT WoS

000481726300105

Klíčová slova anglicky

Thermoelectrics; Single crystal; Transition metal doping; Defects; Transport properties

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 4. 2022 08:57, Mgr. Marie Šípková, DiS.

Anotace

V originále

Few binary compounds attract as much attention as Bi2Se3. In addition to its use as thermoelectric, it has become one of the prototype 3D topological insulators, and it has been demonstrated that doping in appropriate levels can induce magnetism and even superconductivity in bulk Bi2Se3. In this article, we continue the examination of doping with sixth group transition elements, namely, Mo. The solubility of Mo in the host matrix is very low; however, it induces remarkable changes in the material properties. For low doping levels, Mo changes the intrinsic defect structure of Bi2Se3 featuring the Se vacancies toward a structure characterized by embedded Bi-2 double layers. Counterintuitively, Mo doping markedly enhances the mobility of free charge carriers in Bi2Se3 and drives its thermoelectric power factor to its maximum value over a broad temperature range. We provide evidence that the rather disordered structure must not be necessarily detrimental to charge transport in Bi2Se3.

Citovat

CERMAK, P., P. KNOTEK, P. RULEOVA, Václav HOLÝ, K. PALKA, V. KUCEK, L. BENES, J. NAVRATIL a C. DRASAR. High power factor and mobility of single crystals of Bi2Se3 induced by Mo doping. Journal of Solid State Chemistry. San Diego: Elsevier, 2019, roč. 277, SEP, s. 819-827. ISSN 0022-4596. Dostupné z: https://dx.doi.org/10.1016/j.jssc.2019.07.045.

@article{1641486,
   author = {Cermak, P. and Knotek, P. and Ruleova, P. and Holý, Václav and Palka, K. and Kucek, V. and Benes, L. and Navratil, J. and Drasar, C.},
   article_location = {San Diego},
   article_number = {SEP},
   doi = {http://dx.doi.org/10.1016/j.jssc.2019.07.045},
   keywords = {Thermoelectrics; Single crystal; Transition metal doping; Defects; Transport properties},
   language = {eng},
   issn = {0022-4596},
   journal = {Journal of Solid State Chemistry},
   title = {High power factor and mobility of single crystals of Bi2Se3 induced by Mo doping},
   url = {https://www.sciencedirect.com/science/article/pii/S0022459619303792?via%3Dihub},
   volume = {277},
   year = {2019}
}

TY  - JOUR
ID  - 1641486
AU  - Cermak, P. - Knotek, P. - Ruleova, P. - Holý, Václav - Palka, K. - Kucek, V. - Benes, L. - Navratil, J. - Drasar, C.
PY  - 2019
TI  - High power factor and mobility of single crystals of Bi2Se3 induced by Mo doping
JF  - Journal of Solid State Chemistry
VL  - 277
IS  - SEP
SP  - 819-827
EP  - 819-827
PB  - Elsevier
SN  - 00224596
KW  - Thermoelectrics
KW  - Single crystal
KW  - Transition metal doping
KW  - Defects
KW  - Transport properties
UR  - https://www.sciencedirect.com/science/article/pii/S0022459619303792?via%3Dihub
L2  - https://www.sciencedirect.com/science/article/pii/S0022459619303792?via%3Dihub
N2  - Few binary compounds attract as much attention as Bi2Se3. In addition to its use as thermoelectric, it has become one of the prototype 3D topological insulators, and it has been demonstrated that doping in appropriate levels can induce magnetism and even superconductivity in bulk Bi2Se3. In this article, we continue the examination of doping with sixth group transition elements, namely, Mo. The solubility of Mo in the host matrix is very low; however, it induces remarkable changes in the material properties. For low doping levels, Mo changes the intrinsic defect structure of Bi2Se3 featuring the Se vacancies toward a structure characterized by embedded Bi-2 double layers. Counterintuitively, Mo doping markedly enhances the mobility of free charge carriers in Bi2Se3 and drives its thermoelectric power factor to its maximum value over a broad temperature range. We provide evidence that the rather disordered structure must not be necessarily detrimental to charge transport in Bi2Se3.
ER  -

CERMAK, P., P. KNOTEK, P. RULEOVA, Václav HOLÝ, K. PALKA, V. KUCEK, L. BENES, J. NAVRATIL a C. DRASAR. High power factor and mobility of single crystals of Bi2Se3 induced by Mo doping. \textit{Journal of Solid State Chemistry}. San Diego: Elsevier, 2019, roč.~277, SEP, s.~819-827. ISSN~0022-4596. Dostupné z: https://dx.doi.org/10.1016/j.jssc.2019.07.045.

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