Influence of Cross-Correlation of Rough Boundaries on
Reflectance of Thin Films on GaAs and Si Substrates

D 2009

Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates

VIZDA, Frantisek; Ivan OHLÍDAL a Vojtech HRUBY

Základní údaje

Originální název

Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates

Autoři

VIZDA, Frantisek; Ivan OHLÍDAL a Vojtech HRUBY

Vydání

MELVILLE, PHYSICS OF SEMICONDUCTORS, od s. 19-20, 2 s. 2009

Nakladatel

AMER INST PHYSICS

Další údaje

Jazyk

angličtina

Typ výsledku

Stať ve sborníku

Obor

10300 1.3 Physical sciences

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Forma vydání

tištěná verze "print"

Odkazy

URL

Označené pro přenos do RIV

Ano

Organizační jednotka

Přírodovědecká fakulta

ISBN

978-0-7354-0736-7

ISSN

Klíčová slova anglicky

Rough thin films; Semiconductor substrates; Cross-correlation; Reflectance

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 20. 8. 2020 14:44, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

In this contribution the reflectance of thin films on semiconductor substrates with correlated randomly rough boundaries is analyzed. The theoretical approach is based on the scalar theory of diffraction of light. The numerical analysis of the reflectance is performed for rough thin films on GaAs and Si substrates. This analysis demonstrates that the reflectance depends not only on the rms values of the heights of the irregularities of the boundary roughness but it also depends on values of cross-correlation coefficients between the rough boundaries. The magnitudes of boundary roughness and cross-correlation between the rough boundaries depend on the technological procedures of creating thin film systems. By interpreting the measured reflectance spectra, the values of optical and roughness parameters can be determined.

Citovat

VIZDA, Frantisek; Ivan OHLÍDAL a Vojtech HRUBY. Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates. In Caldas, M. J. ; Studart, N. PHYSICS OF SEMICONDUCTORS. MELVILLE: AMER INST PHYSICS, 2009, s. 19-20. ISBN 978-0-7354-0736-7. Dostupné z: https://doi.org/10.1063/1.3295367.

@inproceedings{1674880,
   author = {Vizda, Frantisek and Ohlídal, Ivan and Hruby, Vojtech},
   address = {MELVILLE},
   booktitle = {PHYSICS OF SEMICONDUCTORS},
   doi = {https://doi.org/10.1063/1.3295367},
   editor = {Caldas, M. J. ; Studart, N.},
   keywords = {Rough thin films; Semiconductor substrates; Cross-correlation; Reflectance},
   howpublished = {tištěná verze "print"},
   language = {eng},
   location = {MELVILLE},
   isbn = {978-0-7354-0736-7},
   pages = {19-20},
   publisher = {AMER INST PHYSICS},
   title = {Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates},
   url = {https://doi.org/10.1063/1.3295367},
   year = {2009}
}

TY  - CONF
ID  - 1674880
AU  - Vizda, Frantisek - Ohlídal, Ivan - Hruby, Vojtech
PY  - 2009
TI  - Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates
PB  - AMER INST PHYSICS
CY  - MELVILLE
SN  - 9780735407367
KW  - Rough thin films
KW  - Semiconductor substrates
KW  - Cross-correlation
KW  - Reflectance
UR  - https://doi.org/10.1063/1.3295367
L2  - https://doi.org/10.1063/1.3295367
N2  - In this contribution the reflectance of thin films on semiconductor substrates with correlated randomly rough boundaries is analyzed. The theoretical approach is based on the scalar theory of diffraction of light. The numerical analysis of the reflectance is performed for rough thin films on GaAs and Si substrates. This analysis demonstrates that the reflectance depends not only on the rms values of the heights of the irregularities of the boundary roughness but it also depends on values of cross-correlation coefficients between the rough boundaries. The magnitudes of boundary roughness and cross-correlation between the rough boundaries depend on the technological procedures of creating thin film systems. By interpreting the measured reflectance spectra, the values of optical and roughness parameters can be determined.
ER  -

VIZDA, Frantisek; Ivan OHLÍDAL a Vojtech HRUBY. Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates. In Caldas, M. J. ; Studart, N. \textit{PHYSICS OF SEMICONDUCTORS}. MELVILLE: AMER INST PHYSICS, 2009, s.~19-20. ISBN~978-0-7354-0736-7. Dostupné z: https://doi.org/10.1063/1.3295367.

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