Entropy-controlled fully reversible nanostructure formation of
Ge on miscut vicinal Si(001) surfaces

J 2020

Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces

GROSSAUER, Christian; Václav HOLÝ a Gunther SPRINGHOLZ

Základní údaje

Originální název

Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces

Autoři

GROSSAUER, Christian; Václav HOLÝ (203 Česká republika, domácí) a Gunther SPRINGHOLZ (garant)

Vydání

Physical Review B, College PK, The American Physical Society, 2020, 2469-9950

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 4.036

Kód RIV

RIV/00216224:14310/20:00116625

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1103/PhysRevB.102.075420

UT WoS

000557726800009

EID Scopus

2-s2.0-85090124638

Klíčová slova anglicky

QUANTUM DOTS; SHAPE TRANSITION; SELF-ORGANIZATION; GROWTH; SINGLE; PYRAMIDS; ISLANDS; EPITAXY; STEPS; INAS/GAAS(001)

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 4. 2022 10:50, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Entropy effects substantially modify the growth of self-assembled Ge nanostructures on vicinal Si(001) surfaces, on which one-dimensional nanowire-like structures are formed. As shown by variable temperature scanning tunneling microscopy, these nanostructures are not only tunable in size and shape, but can be fully reversibly erased and reformed without changes in sizes and composition. This unprecedented behavior is caused by the strong free surface energy renormalization due to the large step entropy of vicinal surfaces that strongly increases with increasing temperature. This favors a planar two-dimensional surface at higher temperatures in thermodynamic equilibrium, whereas the nanostructured surface is the preferred low-temperature configuration. Taking the step entropy into account, the critical transition temperature between these surface states derived by free-energy minimization is shown to scale nearly linearly with the Ge coverage-in excellent agreement with the experiments. Most importantly, the nanowire sizes are found to be deterministically controlled by the Ge thickness and vicinal angle, independently of the growth or annealing conditions. Thus, highly reproducible structures with tunable nanogeometries and -dimensions are obtained, which opens promising avenues for device applications.

Citovat

GROSSAUER, Christian; Václav HOLÝ a Gunther SPRINGHOLZ. Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces. Physical Review B. College PK: The American Physical Society, 2020, roč. 102, č. 7, s. 1-13. ISSN 2469-9950. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.102.075420.

@article{1684476,
   author = {Grossauer, Christian and Holý, Václav and Springholz, Gunther},
   article_location = {College PK},
   article_number = {7},
   doi = {http://dx.doi.org/10.1103/PhysRevB.102.075420},
   keywords = {QUANTUM DOTS; SHAPE TRANSITION; SELF-ORGANIZATION; GROWTH; SINGLE; PYRAMIDS; ISLANDS; EPITAXY; STEPS; INAS/GAAS(001)},
   language = {eng},
   issn = {2469-9950},
   journal = {Physical Review B},
   title = {Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces},
   url = {https://doi.org/10.1103/PhysRevB.102.075420},
   volume = {102},
   year = {2020}
}

TY  - JOUR
ID  - 1684476
AU  - Grossauer, Christian - Holý, Václav - Springholz, Gunther
PY  - 2020
TI  - Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces
JF  - Physical Review B
VL  - 102
IS  - 7
SP  - 1-13
EP  - 1-13
PB  - The American Physical Society
SN  - 24699950
KW  - QUANTUM DOTS
KW  - SHAPE TRANSITION
KW  - SELF-ORGANIZATION
KW  - GROWTH
KW  - SINGLE
KW  - PYRAMIDS
KW  - ISLANDS
KW  - EPITAXY
KW  - STEPS
KW  - INAS/GAAS(001)
UR  - https://doi.org/10.1103/PhysRevB.102.075420
L2  - https://doi.org/10.1103/PhysRevB.102.075420
N2  - Entropy effects substantially modify the growth of self-assembled Ge nanostructures on vicinal Si(001) surfaces, on which one-dimensional nanowire-like structures are formed. As shown by variable temperature scanning tunneling microscopy, these nanostructures are not only tunable in size and shape, but can be fully reversibly erased and reformed without changes in sizes and composition. This unprecedented behavior is caused by the strong free surface energy renormalization due to the large step entropy of vicinal surfaces that strongly increases with increasing temperature. This favors a planar two-dimensional surface at higher temperatures in thermodynamic equilibrium, whereas the nanostructured surface is the preferred low-temperature configuration. Taking the step entropy into account, the critical transition temperature between these surface states derived by free-energy minimization is shown to scale nearly linearly with the Ge coverage-in excellent agreement with the experiments. Most importantly, the nanowire sizes are found to be deterministically controlled by the Ge thickness and vicinal angle, independently of the growth or annealing conditions. Thus, highly reproducible structures with tunable nanogeometries and -dimensions are obtained, which opens promising avenues for device applications.
ER  -

GROSSAUER, Christian; Václav HOLÝ a Gunther SPRINGHOLZ. Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces. \textit{Physical Review B}. College PK: The American Physical Society, 2020, roč.~102, č.~7, s.~1-13. ISSN~2469-9950. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.102.075420.

Přehled o publikaci