Ion channelling effect and damage accumulation in
yttria-stabilized zirconia implanted with Ag ions

J 2020

Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions

MIKŠOVÁ, Romana, Petr MALINSKÝ, Petr HARCUBA, Jozef VESELÝ, Václav HOLÝ et. al.

Základní údaje

Originální název

Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions

Autoři

MIKŠOVÁ, Romana, Petr MALINSKÝ, Petr HARCUBA, Jozef VESELÝ, Václav HOLÝ (203 Česká republika, garant, domácí), Ulrich KENTSCH a Anna MACKOVÁ

Vydání

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Amsterdam, Elsevier, 2020, 0168-583X

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10304 Nuclear physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.377

Kód RIV

RIV/00216224:14740/20:00117382

Organizační jednotka

Středoevropský technologický institut

DOI

http://dx.doi.org/10.1016/j.nimb.2020.04.008

UT WoS

000531672400006

Klíčová slova anglicky

Ion-irradiation of crystals; Yttria-stabilized zirconia; RBS-channelling; Ag particles

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 4. 2022 08:42, Mgr. Marie Šípková, DiS.

Anotace

V originále

Yttria stabilized zirconia (YSZ) is well known as a radiation-resistant material. In this study, we present results from 400 keV Ag+ implantations of the (1 0 0) YSZ single crystals to fluences ranging from 5 x 10(15) to 5 x 10(16) cm(-2). The damage depth profiling and accumulation were probed using Rutherford backscattering spectrometry in the channelling mode (RBS-C), Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The axial channelling effect of 2 MeV He+ ions in the implanted YSZ was studied. RBS-C provides us with detailed information about the displaced atoms density depth profiles progressing into greater depths, especially in the case of higher fluence. TEM was utilized to characterize the microstructure evolution and damage accumulation in the buried layer after the implantation. At the highest fluence (5 x 10(16) cm(-2)), Ag depth profile in the depth of 30-130 nm was identified in TEM bright and dark field images as well as in the electron diffraction patterns. Ag depth profiles are in agreement with depth profiles determined by RBS which show maximum Ag concentration in the depth of 94 nm. The reason for the decrease of the deformation identified by XRD in the vertical direction is the defect formation.

Citovat

MIKŠOVÁ, Romana, Petr MALINSKÝ, Petr HARCUBA, Jozef VESELÝ, Václav HOLÝ, Ulrich KENTSCH a Anna MACKOVÁ. Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Amsterdam: Elsevier, 2020, roč. 474, JUL, s. 29-34. ISSN 0168-583X. Dostupné z: https://dx.doi.org/10.1016/j.nimb.2020.04.008.

@article{1710836,
   author = {Mikšová, Romana and Malinský, Petr and Harcuba, Petr and Veselý, Jozef and Holý, Václav and Kentsch, Ulrich and Macková, Anna},
   article_location = {Amsterdam},
   article_number = {JUL},
   doi = {http://dx.doi.org/10.1016/j.nimb.2020.04.008},
   keywords = {Ion-irradiation of crystals; Yttria-stabilized zirconia; RBS-channelling; Ag particles},
   language = {eng},
   issn = {0168-583X},
   journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
   title = {Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions},
   url = {https://doi.org/10.1016/j.nimb.2020.04.008},
   volume = {474},
   year = {2020}
}

TY  - JOUR
ID  - 1710836
AU  - Mikšová, Romana - Malinský, Petr - Harcuba, Petr - Veselý, Jozef - Holý, Václav - Kentsch, Ulrich - Macková, Anna
PY  - 2020
TI  - Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions
JF  - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
VL  - 474
IS  - JUL
SP  - 29-34
EP  - 29-34
PB  - Elsevier
SN  - 0168583X
KW  - Ion-irradiation of crystals
KW  - Yttria-stabilized zirconia
KW  - RBS-channelling
KW  - Ag particles
UR  - https://doi.org/10.1016/j.nimb.2020.04.008
L2  - https://doi.org/10.1016/j.nimb.2020.04.008
N2  - Yttria stabilized zirconia (YSZ) is well known as a radiation-resistant material. In this study, we present results from 400 keV Ag+ implantations of the (1 0 0) YSZ single crystals to fluences ranging from 5 x 10(15) to 5 x 10(16) cm(-2). The damage depth profiling and accumulation were probed using Rutherford backscattering spectrometry in the channelling mode (RBS-C), Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The axial channelling effect of 2 MeV He+ ions in the implanted YSZ was studied. RBS-C provides us with detailed information about the displaced atoms density depth profiles progressing into greater depths, especially in the case of higher fluence. TEM was utilized to characterize the microstructure evolution and damage accumulation in the buried layer after the implantation. At the highest fluence (5 x 10(16) cm(-2)), Ag depth profile in the depth of 30-130 nm was identified in TEM bright and dark field images as well as in the electron diffraction patterns. Ag depth profiles are in agreement with depth profiles determined by RBS which show maximum Ag concentration in the depth of 94 nm. The reason for the decrease of the deformation identified by XRD in the vertical direction is the defect formation.
ER  -

MIKŠOVÁ, Romana, Petr MALINSKÝ, Petr HARCUBA, Jozef VESELÝ, Václav HOLÝ, Ulrich KENTSCH a Anna MACKOVÁ. Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions. \textit{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}. Amsterdam: Elsevier, 2020, roč.~474, JUL, s.~29-34. ISSN~0168-583X. Dostupné z: https://dx.doi.org/10.1016/j.nimb.2020.04.008.

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