Light emission from direct band gap germanium containing
split-interstitial defects

J 2021

Light emission from direct band gap germanium containing split-interstitial defects

MURPHY-ARMANDO, Felipe; Moritz BREHM; Petr STEINDL; Mark LUSK; T. FROMHERZ et al.

Základní údaje

Originální název

Light emission from direct band gap germanium containing split-interstitial defects

Autoři

MURPHY-ARMANDO, Felipe; Moritz BREHM; Petr STEINDL; Mark LUSK; T. FROMHERZ; Karlheinz SCHWARZ a Peter BLAHA

Vydání

Physical Review B, The American Physical Society, 2021, 2469-9950

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.908

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/21:00121241

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Spontaneous emission; k dot p method; Electronic structure; first-principles calculations; interstitials

Štítky

14312020, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 22. 3. 2021 16:36, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the main bottle-neck for complementary metal-oxide semiconductor-compatible short-distance data transmission, single-photon emission, and sensing based on silicon photonics. Germanium, a group-IV element like Si, is already widely used in silicon fabs. While the energy band gap of Ge is intrinsically indirect, we predict that the insertion of Ge-Ge split-[110] interstitials into crystalline Ge can open up a direct band gap transmission path. Here, we calculate from first principles the band structure and optical emission properties of Ge, Sb, and Sn split-[110] interstitials in bulk and low-dimensional Ge at different doping concentrations. Two types of electronic states provide the light-emission enhancement below the direct band gap of Ge: a hybridized L-Gamma state at the Brillouin zone center and a conduction band of Delta band character that couples to a raised valence band along the Gamma-X direction. Majority carrier introduced to the system through doping can enhance light emission by saturation of nonradiative paths. Ge-Sn split interstitials in Ge shift the top of the valence band towards the Gamma-X direction and increase the Gamma character of the L-Gamma state, which results in a shift to longer emission wavelengths. Key spectral regions for datacom and sensing applications can be covered by applying quantum confinement in defect-enhanced Ge quantum dots for an emission wavelength shift from the midinfrared to the telecom regime.

Citovat

MURPHY-ARMANDO, Felipe; Moritz BREHM; Petr STEINDL; Mark LUSK; T. FROMHERZ; Karlheinz SCHWARZ a Peter BLAHA. Light emission from direct band gap germanium containing split-interstitial defects. Physical Review B. The American Physical Society, 2021, roč. 103, č. 8, s. "085310-1"-"085310-11", 11 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.103.085310.

@article{1752879,
   author = {MurphyandArmando, Felipe and Brehm, Moritz and Steindl, Petr and Lusk, Mark and Fromherz, T. and Schwarz, Karlheinz and Blaha, Peter},
   article_number = {8},
   doi = {https://doi.org/10.1103/PhysRevB.103.085310},
   keywords = {Spontaneous emission; k dot p method; Electronic structure; first-principles calculations; interstitials},
   language = {eng},
   issn = {2469-9950},
   journal = {Physical Review B},
   title = {Light emission from direct band gap germanium containing split-interstitial defects},
   url = {https://doi.org/10.1103/PhysRevB.103.085310},
   volume = {103},
   year = {2021}
}

TY  - JOUR
ID  - 1752879
AU  - Murphy-Armando, Felipe - Brehm, Moritz - Steindl, Petr - Lusk, Mark - Fromherz, T. - Schwarz, Karlheinz - Blaha, Peter
PY  - 2021
TI  - Light emission from direct band gap germanium containing split-interstitial defects
JF  - Physical Review B
VL  - 103
IS  - 8
SP  - "085310-1"-"085310-11"
EP  - "085310-1"-"085310-11"
PB  - The American Physical Society
SN  - 24699950
KW  - Spontaneous emission
KW  - k dot p method
KW  - Electronic structure
KW  - first-principles calculations
KW  - interstitials
UR  - https://doi.org/10.1103/PhysRevB.103.085310
N2  - The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the main bottle-neck for complementary metal-oxide semiconductor-compatible short-distance data transmission, single-photon emission, and sensing based on silicon photonics. Germanium, a group-IV element like Si, is already widely used in silicon fabs. While the energy band gap of Ge is intrinsically indirect, we predict that the insertion of Ge-Ge split-[110] interstitials into crystalline Ge can open up a direct band gap transmission path. Here, we calculate from first principles the band structure and optical emission properties of Ge, Sb, and Sn split-[110] interstitials in bulk and low-dimensional Ge at different doping concentrations. Two types of electronic states provide the light-emission enhancement below the direct band gap of Ge: a hybridized L-Gamma state at the Brillouin zone center and a conduction band of Delta band character that couples to a raised valence band along the Gamma-X direction. Majority carrier introduced to the system through doping can enhance light emission by saturation of nonradiative paths. Ge-Sn split interstitials in Ge shift the top of the valence band towards the Gamma-X direction and increase the Gamma character of the L-Gamma state, which results in a shift to longer emission wavelengths. Key spectral regions for datacom and sensing applications can be covered by applying quantum confinement in defect-enhanced Ge quantum dots for an emission wavelength shift from the midinfrared to the telecom regime.
ER  -

MURPHY-ARMANDO, Felipe; Moritz BREHM; Petr STEINDL; Mark LUSK; T. FROMHERZ; Karlheinz SCHWARZ a Peter BLAHA. Light emission from direct band gap germanium containing split-interstitial defects. \textit{Physical Review B}. The American Physical Society, 2021, roč.~103, č.~8, s.~''085310-1''-''085310-11'', 11 s. ISSN~2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.103.085310.

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