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@article{1752941,
author = {Šraitrová, Kateřina and Čížek, Jakub and Holý, Václav and Kašparová, Jana and Plecháček, Tomáš and Kucek, Vladimír and Navrátil, Jiří and Krejčová, Anna and Drašar, Čestmír},
article_location = {College PK},
article_number = {8},
doi = {http://dx.doi.org/10.1103/PhysRevB.103.085203},
keywords = {dopants; electrical conductivity; point defects; vacancies; doped semiconductors; crystal growth; single crystal materials},
language = {eng},
issn = {2469-9950},
journal = {Physical Review B},
title = {As-doped SnSe single crystals: Ambivalent doping and interaction with intrinsic defects},
url = {https://doi.org/10.1103/PhysRevB.103.085203},
volume = {103},
year = {2021}
}
TY - JOUR
ID - 1752941
AU - Šraitrová, Kateřina - Čížek, Jakub - Holý, Václav - Kašparová, Jana - Plecháček, Tomáš - Kucek, Vladimír - Navrátil, Jiří - Krejčová, Anna - Drašar, Čestmír
PY - 2021
TI - As-doped SnSe single crystals: Ambivalent doping and interaction with intrinsic defects
JF - Physical Review B
VL - 103
IS - 8
SP - "085203-1"-"085203-12"
EP - "085203-1"-"085203-12"
PB - American Physical Society
SN - 24699950
KW - dopants
KW - electrical conductivity
KW - point defects
KW - vacancies
KW - doped semiconductors
KW - crystal growth
KW - single crystal materials
UR - https://doi.org/10.1103/PhysRevB.103.085203
N2 - We performed ambivalent doping study on single crystals of two sets, SnSe1-xAsx and Sn1-xAsxSe, with the aim to explore the interaction of doping species with intrinsic defects. We found that As atoms substitute preferentially for Se atoms in both sets forming the extrinsic substitutional point defect As-Se. In the first set, As lowers the concentration of Sn vacancies, V-Sn, by an order of magnitude compared to undoped stoichiometric SnSe crystal. The remaining Sn vacancies are preferentially coordinated with As atoms. Importantly, a very low concentration of As led to healing process of hosting structure in terms of intrinsic point defects and eventual SnSe2 inclusions. This is reflected in an increase of the Hall mobility and drop of the Hall concentration. In the second set, the concentration of Sn vacancies markedly increases upon doping in contrast to the first set. Additionally, the coordination of Sn vacancies by As atoms is less evident due to the high concentration of vacancies. The substitutional defect As-Se is a deep-level defect that produces no free carriers at room temperature. Moreover, the coupling of V-Sn to As-Se defects increases their activation energy. This results in an unprecedentedly low Hall concentration in SnSe which stays below 10(16) cm(-3) for x = 0.0075. The present study indicates that doping of SnSe is a rather complex process that generally includes a strong interaction of doping atoms with the hosting structure. On the other hand, such doping allows adjustment of the type and concentration of defects. The present study reveals a general tendency of point defects to clustering, which modifies the properties of point defects markedly.
ER -
ŠRAITROVÁ, Kateřina, Jakub ČÍŽEK, Václav HOLÝ, Jana KAŠPAROVÁ, Tomáš PLECHÁČEK, Vladimír KUCEK, Jiří NAVRÁTIL, Anna KREJČOVÁ a Čestmír DRAŠAR. As-doped SnSe single crystals: Ambivalent doping and interaction with intrinsic defects. \textit{Physical Review B}. College PK: American Physical Society, 2021, roč.~103, č.~8, s.~''085203-1''-''085203-12'', 12 s. ISSN~2469-9950. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.103.085203.
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