Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk
glasses and thin films with a deep ultraviolet nanosecond laser

J 2021

Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk glasses and thin films with a deep ultraviolet nanosecond laser

KUTÁLEK, P.; P. KNOTEK; A. ŠANDOVÁ; Tomáš VACULOVIČ; E. ČERNOŠKOVÁ et al.

Základní údaje

Originální název

Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk glasses and thin films with a deep ultraviolet nanosecond laser

Autoři

KUTÁLEK, P.; P. KNOTEK; A. ŠANDOVÁ; Tomáš VACULOVIČ; E. ČERNOŠKOVÁ a L. TICHÝ

Vydání

Applied Surface Science, Elsevier Science BV, 2021, 0169-4332

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 7.392

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/21:00121664

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Chalcogenides; Bulk glasses; Thin films; Laser ablation; Laser direct writing

Štítky

14313010, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 28. 5. 2021 12:03, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Binary (As2S3, As2Se3, GeS2 GeSe2 and GeSe3) bulk glasses and corresponding thin films were prepared and illuminated with deep ultraviolet nanosecond (DUV ns) pulsed laser operating at 213 nm. The illumination of samples led to the reproducible crater?s formation. Subsequently, the influence of the pulses number and laser fluence on their creation was studied. The ablation rate and laser-induced ablation threshold (LIAT) were determined based on these experiments. The craters with the help of digital holographic microscopy (DHM), atomic force microscopy (AFM), phase shift imaging mode of AFM, Raman scattering, scanning electron microscopy and energy-dispersive X-ray spectroscopy were characterized. As an application possibility, the formation of the diffraction gratings by laser direct writing is presented and their functionality is demonstrated.

Citovat

KUTÁLEK, P.; P. KNOTEK; A. ŠANDOVÁ; Tomáš VACULOVIČ; E. ČERNOŠKOVÁ a L. TICHÝ. Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk glasses and thin films with a deep ultraviolet nanosecond laser. Applied Surface Science. Elsevier Science BV, 2021, roč. 554, July, s. "149582", 12 s. ISSN 0169-4332. Dostupné z: https://doi.org/10.1016/j.apsusc.2021.149582.

@article{1772069,
   author = {Kutálek, P. and Knotek, P. and Šandová, A. and Vaculovič, Tomáš and Černošková, E. and Tichý, L.},
   article_number = {July},
   doi = {https://doi.org/10.1016/j.apsusc.2021.149582},
   keywords = {Chalcogenides; Bulk glasses; Thin films; Laser ablation; Laser direct writing},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk glasses and thin films with a deep ultraviolet nanosecond laser},
   url = {https://www.sciencedirect.com/science/article/pii/S0169433221006589#!},
   volume = {554},
   year = {2021}
}

TY  - JOUR
ID  - 1772069
AU  - Kutálek, P. - Knotek, P. - Šandová, A. - Vaculovič, Tomáš - Černošková, E. - Tichý, L.
PY  - 2021
TI  - Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk glasses and thin films with a deep ultraviolet nanosecond laser
JF  - Applied Surface Science
VL  - 554
IS  - July
SP  - "149582"
EP  - "149582"
PB  - Elsevier Science BV
SN  - 01694332
KW  - Chalcogenides
KW  - Bulk glasses
KW  - Thin films
KW  - Laser ablation
KW  - Laser direct writing
UR  - https://www.sciencedirect.com/science/article/pii/S0169433221006589#!
N2  - Binary (As2S3, As2Se3, GeS2 GeSe2 and GeSe3) bulk glasses and corresponding thin films were prepared and illuminated with deep ultraviolet nanosecond (DUV ns) pulsed laser operating at 213 nm. The illumination of samples led to the reproducible crater?s formation. Subsequently, the influence of the pulses number and laser fluence on their creation was studied. The ablation rate and laser-induced ablation threshold (LIAT) were determined based on these experiments. The craters with the help of digital holographic microscopy (DHM), atomic force microscopy (AFM), phase shift imaging mode of AFM, Raman scattering, scanning electron microscopy and energy-dispersive X-ray spectroscopy were characterized. As an application possibility, the formation of the diffraction gratings by laser direct writing is presented and their functionality is demonstrated.
ER  -

KUTÁLEK, P.; P. KNOTEK; A. ŠANDOVÁ; Tomáš VACULOVIČ; E. ČERNOŠKOVÁ a L. TICHÝ. Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk glasses and thin films with a deep ultraviolet nanosecond laser. \textit{Applied Surface Science}. Elsevier Science BV, 2021, roč.~554, July, s.~''149582'', 12 s. ISSN~0169-4332. Dostupné z: https://doi.org/10.1016/j.apsusc.2021.149582.

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