Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP
Stranski–Krastanov quantum dots

J 2021

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots

GAJJELA, Raja S. R., Arthur L. HENDRIKS, James O. DOUGLAS, Elisa M. SALA, Petr STEINDL et. al.

Základní údaje

Originální název

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots

Autoři

GAJJELA, Raja S. R. (garant), Arthur L. HENDRIKS, James O. DOUGLAS, Elisa M. SALA, Petr STEINDL (203 Česká republika, domácí), Petr KLENOVSKÝ (203 Česká republika, domácí), Paul A. J. BAGOT, Michael P. MOODY, Dieter BIMBERG a Paul M. KOENRAAD

Vydání

Light: Science & Applications, Springer Nature, 2021, 2047-7538

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 20.257

Kód RIV

RIV/00216224:14310/21:00121781

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1038/s41377-021-00564-z

UT WoS

000661488200001

Klíčová slova anglicky

Photonic devices; Quantum dots

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 16. 5. 2022 11:23, Mgr. Marie Šípková, DiS.

Anotace

V originále

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.

Návaznosti

8C18001, projekt VaV

Název: CMOS Compatible Single Photon Sources based on SiGe Quantum Dots (Akronym: CUSPIDOR)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CMOS Compatible Single Photon Sources based on SiGe Quantum Dots, QUANTERA: Kvantové informační a komunikační vědy a technologie

Citovat

GAJJELA, Raja S. R., Arthur L. HENDRIKS, James O. DOUGLAS, Elisa M. SALA, Petr STEINDL, Petr KLENOVSKÝ, Paul A. J. BAGOT, Michael P. MOODY, Dieter BIMBERG a Paul M. KOENRAAD. Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots. Light: Science & Applications. Springer Nature, 2021, roč. 10, č. 1, s. 1-13. ISSN 2047-7538. Dostupné z: https://dx.doi.org/10.1038/s41377-021-00564-z.

@article{1776406,
   author = {Gajjela, Raja S. R. and Hendriks, Arthur L. and Douglas, James O. and Sala, Elisa M. and Steindl, Petr and Klenovský, Petr and Bagot, Paul A. J. and Moody, Michael P. and Bimberg, Dieter and Koenraad, Paul M.},
   article_number = {1},
   doi = {http://dx.doi.org/10.1038/s41377-021-00564-z},
   keywords = {Photonic devices; Quantum dots},
   language = {eng},
   issn = {2047-7538},
   journal = {Light: Science & Applications},
   title = {Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots},
   url = {https://doi.org/10.1038/s41377-021-00564-z},
   volume = {10},
   year = {2021}
}

TY  - JOUR
ID  - 1776406
AU  - Gajjela, Raja S. R. - Hendriks, Arthur L. - Douglas, James O. - Sala, Elisa M. - Steindl, Petr - Klenovský, Petr - Bagot, Paul A. J. - Moody, Michael P. - Bimberg, Dieter - Koenraad, Paul M.
PY  - 2021
TI  - Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
JF  - Light: Science & Applications
VL  - 10
IS  - 1
SP  - 1-13
EP  - 1-13
PB  - Springer Nature
SN  - 20477538
KW  - Photonic devices
KW  - Quantum dots
UR  - https://doi.org/10.1038/s41377-021-00564-z
N2  - We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.
ER  -

GAJJELA, Raja S. R., Arthur L. HENDRIKS, James O. DOUGLAS, Elisa M. SALA, Petr STEINDL, Petr KLENOVSKÝ, Paul A. J. BAGOT, Michael P. MOODY, Dieter BIMBERG a Paul M. KOENRAAD. Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots. \textit{Light: Science \&{} Applications}. Springer Nature, 2021, roč.~10, č.~1, s.~1-13. ISSN~2047-7538. Dostupné z: https://dx.doi.org/10.1038/s41377-021-00564-z.

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