X-ray rocking curve imaging on large arrays of extremely tall
SiGe microcrystals epitaxial on Si

J 2021

X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si

MEDUŇA, Mojmír, Ondřej CAHA, Emanuil CHOUMAS, Franco BRESSAN, Hans VON KÄNEL et. al.

Základní údaje

Originální název

X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si

Autoři

MEDUŇA, Mojmír (203 Česká republika, garant, domácí), Ondřej CAHA (203 Česká republika, domácí), Emanuil CHOUMAS, Franco BRESSAN a Hans VON KÄNEL

Vydání

Journal of Applied Crystallography, International Union of Crystallography, 2021, 0021-8898

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.304 v roce 2020

Kód RIV

RIV/00216224:14310/21:00122453

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1107/S1600576721004969

UT WoS

000683118400005

Klíčová slova anglicky

rocking curve imaging; patterned Si substrates; Ge microcrystals; X-ray diffraction; thermal strain relaxation

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 27. 9. 2021 14:42, Mgr. Marie Šípková, DiS.

Anotace

V originále

This work investigates layers of densely spaced SiGe microcrystals epitaxially formed on patterned Si and grown up to extreme heights of 40 and 100 mm using the rocking curve imaging technique with standard laboratory equipment and a 2D X-ray pixel detector. As the crystalline tilt varied both within the epitaxial SiGe layers and inside the individual microcrystals, it was possible to obtain real-space 2D maps of the local lattice bending and distortion across the complete SiGe surface. These X-ray maps, showing the variation of crystalline quality along the sample surface, were compared with optical and scanning electron microscopy images. Knowing the distribution of the X-ray diffraction peak intensity, peak position and peak width immediately yields the crystal lattice bending locally present in the samples as a result of the thermal processes arising during the growth. The results found here by a macroscopic-scale imaging technique reveal that the array of large microcrystals, which tend to fuse at a certain height, forms domains limited by cracks during cooling after the growth. The domains are characterized by uniform lattice bending and their boundaries are observed as higher distortion of the crystal structure. The effect of concave thermal lattice bending inside the microcrystal array is in excellent agreement with the results previously presented on a microscopic scale using scanning nanodiffraction.

Návaznosti

LQ1601, projekt VaV

Název: CEITEC 2020 (Akronym: CEITEC2020)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC 2020

90110, velká výzkumná infrastruktura

Název: CzechNanoLab

Citovat

MEDUŇA, Mojmír, Ondřej CAHA, Emanuil CHOUMAS, Franco BRESSAN a Hans VON KÄNEL. X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si. Journal of Applied Crystallography. International Union of Crystallography, 2021, roč. 54, August, s. 1071-1080. ISSN 0021-8898. Dostupné z: https://dx.doi.org/10.1107/S1600576721004969.

@article{1794560,
   author = {Meduňa, Mojmír and Caha, Ondřej and Choumas, Emanuil and Bressan, Franco and von Känel, Hans},
   article_number = {August},
   doi = {http://dx.doi.org/10.1107/S1600576721004969},
   keywords = {rocking curve imaging; patterned Si substrates; Ge microcrystals; X-ray diffraction; thermal strain relaxation},
   language = {eng},
   issn = {0021-8898},
   journal = {Journal of Applied Crystallography},
   title = {X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si},
   url = {https://doi.org/10.1107/S1600576721004969},
   volume = {54},
   year = {2021}
}

TY  - JOUR
ID  - 1794560
AU  - Meduňa, Mojmír - Caha, Ondřej - Choumas, Emanuil - Bressan, Franco - von Känel, Hans
PY  - 2021
TI  - X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si
JF  - Journal of Applied Crystallography
VL  - 54
IS  - August
SP  - 1071-1080
EP  - 1071-1080
PB  - International Union of Crystallography
SN  - 00218898
KW  - rocking curve imaging
KW  - patterned Si substrates
KW  - Ge microcrystals
KW  - X-ray diffraction
KW  - thermal strain relaxation
UR  - https://doi.org/10.1107/S1600576721004969
N2  - This work investigates layers of densely spaced SiGe microcrystals epitaxially formed on patterned Si and grown up to extreme heights of 40 and 100 mm using the rocking curve imaging technique with standard laboratory equipment and a 2D X-ray pixel detector. As the crystalline tilt varied both within the epitaxial SiGe layers and inside the individual microcrystals, it was possible to obtain real-space 2D maps of the local lattice bending and distortion across the complete SiGe surface. These X-ray maps, showing the variation of crystalline quality along the sample surface, were compared with optical and scanning electron microscopy images. Knowing the distribution of the X-ray diffraction peak intensity, peak position and peak width immediately yields the crystal lattice bending locally present in the samples as a result of the thermal processes arising during the growth. The results found here by a macroscopic-scale imaging technique reveal that the array of large microcrystals, which tend to fuse at a certain height, forms domains limited by cracks during cooling after the growth. The domains are characterized by uniform lattice bending and their boundaries are observed as higher distortion of the crystal structure. The effect of concave thermal lattice bending inside the microcrystal array is in excellent agreement with the results previously presented on a microscopic scale using scanning nanodiffraction.
ER  -

MEDUŇA, Mojmír, Ondřej CAHA, Emanuil CHOUMAS, Franco BRESSAN a Hans VON KÄNEL. X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si. \textit{Journal of Applied Crystallography}. International Union of Crystallography, 2021, roč.~54, August, s.~1071-1080. ISSN~0021-8898. Dostupné z: https://dx.doi.org/10.1107/S1600576721004969.

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