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@article{1795816,
author = {Steindl, Petr and Sala, Elisa Maddalena and Alén, Benito and Bimberg, Dieter and Klenovský, Petr},
article_number = {10},
doi = {http://dx.doi.org/10.1088/1367-2630/ac2bd6},
keywords = {III-V semiconductors; quantum dots; photoluminescence; time-resolved photoluminescence; carrier dynamics; lifetimes},
language = {eng},
issn = {1367-2630},
journal = {New Journal of Physics},
title = {On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)},
url = {https://doi.org/10.1088/1367-2630/ac2bd6},
volume = {23},
year = {2021}
}
TY - JOUR
ID - 1795816
AU - Steindl, Petr - Sala, Elisa Maddalena - Alén, Benito - Bimberg, Dieter - Klenovský, Petr
PY - 2021
TI - On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
JF - New Journal of Physics
VL - 23
IS - 10
SP - 103029
EP - 103029
PB - IOP Publishing Ltd.
SN - 13672630
KW - III-V semiconductors
KW - quantum dots
KW - photoluminescence
KW - time-resolved photoluminescence
KW - carrier dynamics
KW - lifetimes
UR - https://doi.org/10.1088/1367-2630/ac2bd6
N2 - Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and the GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. Moreover, based on the considerable tunability of the QDs depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, due to the feasibility of a nearly defect-free growth of GaP on Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction spatial distribution.
ER -
STEINDL, Petr, Elisa Maddalena SALA, Benito ALÉN, Dieter BIMBERG a Petr KLENOVSKÝ. On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001). \textit{New Journal of Physics}. IOP Publishing Ltd., 2021, roč.~23, č.~10, s.~103029-103044. ISSN~1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/ac2bd6.
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