HUMLÍČEK, Josef, Luděk BOČÁNEK, Karel NAVRÁTIL, Petr PÁNEK a Radoslav ŠVEHLA. Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures. Solid State Communications. UK: Elsevier Science, 1995, roč. 93(1995), č. 9, s. 725-728. ISSN 0038-1098. |
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@article{197243, author = {Humlíček, Josef and Bočánek, Luděk and Navrátil, Karel and Pánek, Petr and Švehla, Radoslav}, article_location = {UK}, article_number = {9}, language = {eng}, issn = {0038-1098}, journal = {Solid State Communications}, title = {Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures}, volume = {93(1995)}, year = {1995} }
TY - JOUR ID - 197243 AU - Humlíček, Josef - Bočánek, Luděk - Navrátil, Karel - Pánek, Petr - Švehla, Radoslav PY - 1995 TI - Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures JF - Solid State Communications VL - 93(1995) IS - 9 SP - 725 EP - 725 PB - Elsevier Science SN - 00381098 ER -
HUMLÍČEK, Josef, Luděk BOČÁNEK, Karel NAVRÁTIL, Petr PÁNEK a Radoslav ŠVEHLA. Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures. \textit{Solid State Communications}. UK: Elsevier Science, 1995, roč.~93(1995), č.~9, s.~725-728. ISSN~0038-1098.
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