HOLÝ, Václav, A.A. DARHUBER, J. STANGL, G. BAUER, J. NUTZEL and G. ABSTREITER. X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers. Semicond. Sci. Technol. UK: Publishing Ltd, 1998, 13(1998), -, p. 590-598. ISSN 0268-1242. |
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@article{200358, author = {Holý, Václav and Darhuber, A.A. and Stangl, J. and Bauer, G. and Nutzel, J. and Abstreiter, G.}, article_location = {UK}, article_number = {-}, keywords = {x-ray}, language = {eng}, issn = {0268-1242}, journal = {Semicond. Sci. Technol.}, title = {X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers}, volume = {13(1998)}, year = {1998} }
TY - JOUR ID - 200358 AU - Holý, Václav - Darhuber, A.A. - Stangl, J. - Bauer, G. - Nutzel, J. - Abstreiter, G. PY - 1998 TI - X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers JF - Semicond. Sci. Technol. VL - 13(1998) IS - - SP - 590 EP - 590 PB - Publishing Ltd SN - 02681242 KW - x-ray ER -
HOLÝ, Václav, A.A. DARHUBER, J. STANGL, G. BAUER, J. NUTZEL and G. ABSTREITER. X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers. \textit{Semicond. Sci. Technol.}. UK: Publishing Ltd, 1998, 13(1998), -, p.~590-598. ISSN~0268-1242.
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