Complete Optical Characterization of the SiO2/Si System by
Spectroscopic Ellipsometry Spectroscopic Reflectometry and
Atomic Force Microscopy

J 1999

Complete Optical Characterization of the SiO2/Si System by Spectroscopic Ellipsometry Spectroscopic Reflectometry and Atomic Force Microscopy

OHLÍDAL, Ivan, Daniel FRANTA, Emil PINČÍK a Miloslav OHLÍDAL

Základní údaje

Originální název

Complete Optical Characterization of the SiO2/Si System by Spectroscopic Ellipsometry Spectroscopic Reflectometry and Atomic Force Microscopy

Autoři

OHLÍDAL, Ivan (203 Česká republika, garant), Daniel FRANTA (203 Česká republika), Emil PINČÍK a Miloslav OHLÍDAL

Vydání

Surface and Interface Analysis, USA, John Wiley & Sons, 1999, 0142-2421

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.705

Kód RIV

RIV/00216224:14310/99:00002109

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Optical constants of Si and SiO2; Spectrosopic reflectometry; Spectroscopic ellipsometry

Štítky

spectroscopic ellipsometry, Spectrosopic reflectometry

Změněno: 21. 12. 2003 23:28, Mgr. Daniel Franta, Ph.D.

Anotace

V originále

In this paper results concerning the optical analysis of the system SiO2/Si performed by the combined ellipsometric and reflectometric method used in the multiple-sample modification will be presented. This method is based on combining both the single-wavelength method and dispersion method. Three models of the system mentioned, i.e. the model of the substrate and the layer with the smooth boundaries, the same model with transition layer and the model of the substrate and the layer with rough boundaries, will be used to interpret the experimental data. The spectral dependences of the optical constants of silicon and SiO2 with the values of the other parameters will be determined. It will be shown that the simplest model with the smooth boundary is the most convenient with the experimental data.

Návaznosti

GA202/98/0988, projekt VaV

Název: Charakterizace vrstevnatých systémů s náhodně drsnými rozhraními pomocí optických a rtg metod

Investor: Grantová agentura ČR, Charakterizace vrstevnatých systémů s náhodně drsnými rozhraními pomocí optických a rtg metod

VS96084, projekt VaV

Název: Společné laboratoře pro aplikovanou fyziku plazmatu a plazmovou chemii na PřF a PedF MU, VA v Brně a ÚFP AV ČR v Praze

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Společné laboratoře pro aplikovanou fyziku plazmatu a plazmovou chemii na PřF a PedF MU, VA v Brně a ÚFP AV ČR v Praze

Citovat

OHLÍDAL, Ivan, Daniel FRANTA, Emil PINČÍK a Miloslav OHLÍDAL. Complete Optical Characterization of the SiO2/Si System by Spectroscopic Ellipsometry Spectroscopic Reflectometry and Atomic Force Microscopy. Surface and Interface Analysis. USA: John Wiley & Sons, 1999, roč. 28, č. 1, s. 240-244. ISSN 0142-2421.

@article{208731,
   author = {Ohlídal, Ivan and Franta, Daniel and Pinčík, Emil and Ohlídal, Miloslav},
   article_location = {USA},
   article_number = {1},
   keywords = {Optical constants of Si and SiO2; Spectrosopic reflectometry; Spectroscopic ellipsometry},
   language = {eng},
   issn = {0142-2421},
   journal = {Surface and Interface Analysis},
   title = {Complete Optical Characterization of the SiO2/Si System by Spectroscopic Ellipsometry Spectroscopic Reflectometry and Atomic Force Microscopy},
   url = {http://hydra.physics.muni.cz/~franta/bib/SIA28_240.html},
   volume = {28},
   year = {1999}
}

TY  - JOUR
ID  - 208731
AU  - Ohlídal, Ivan - Franta, Daniel - Pinčík, Emil - Ohlídal, Miloslav
PY  - 1999
TI  - Complete Optical Characterization of the SiO2/Si System by Spectroscopic Ellipsometry Spectroscopic Reflectometry and Atomic Force Microscopy
JF  - Surface and Interface Analysis
VL  - 28
IS  - 1
SP  - 240
EP  - 240
PB  - John Wiley & Sons
SN  - 01422421
KW  - Optical constants of Si and SiO2
KW  - Spectrosopic reflectometry
KW  - Spectroscopic ellipsometry
UR  - http://hydra.physics.muni.cz/~franta/bib/SIA28_240.html
N2  - In this paper results concerning the optical analysis of the system SiO2/Si performed by the combined ellipsometric and reflectometric method used in the multiple-sample modification will be presented. This method is based on combining both the single-wavelength method and dispersion method. Three models of the system mentioned, i.e. the model of the substrate and the layer with the smooth boundaries, the same model with transition layer and the model of the substrate and the layer with rough boundaries, will be used to interpret the experimental data. The spectral dependences of the optical constants of silicon and SiO2 with the values of the other parameters will be determined. It will be shown that the simplest model with the smooth boundary is the most convenient with the experimental data.
ER  -

OHLÍDAL, Ivan, Daniel FRANTA, Emil PINČÍK a Miloslav OHLÍDAL. Complete Optical Characterization of the SiO2/Si System by Spectroscopic Ellipsometry Spectroscopic Reflectometry and Atomic Force Microscopy. \textit{Surface and Interface Analysis}. USA: John Wiley \&{} Sons, 1999, roč.~28, č.~1, s.~240-244. ISSN~0142-2421.

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