Grazing Incidence X-ray Diffraction and Wide Angle X-ray Scattering using Laboratory Sources

NOVÁK, Jiří. Grazing Incidence X-ray Diffraction and Wide Angle X-ray Scattering using Laboratory Sources. 2022. ISBN 978-80-574-0158-2.

Základní údaje

• Originální název: Grazing Incidence X-ray Diffraction and Wide Angle X-ray Scattering using Laboratory Sources
• Autoři: NOVÁK, Jiří.
• Vydání: 2022.

Další údaje

• Originální jazyk: angličtina
• Typ výsledku: Prezentace na konferencích
• Stát vydavatele: Slovensko
• Utajení: není předmětem státního či obchodního tajemství
• WWW: Conference web-page Book of Abstracts
• Organizační jednotka: Přírodovědecká fakulta
• ISBN: 978-80-574-0158-2
• Klíčová slova anglicky: x-ray scattering; grazing incidence; instrumentation; thin films; organic semiconductors
• Příznaky: Mezinárodní význam

Anotace

Grazing incidence (GI) X-ray scattering techniques are well established non-destructive methods for characterization of thin films crystal structure and morphology. Their main features are the depth resolution and the enhancement of the scattering from the film surface. The first part of the talk will deal with the basics of interaction of X-rays with solid materials and the geometry of X-ray scattering experiments, which are necessary for understanding GI techniques. Additionally, examples of possible setups for measurements of grazing incidence in-plane X-ray diffraction (GIIXRD) and grazing incidence wide angle scattering (GIWAXS) in home laboratories will be shown.The attention will be paid to advantages and disadvantages of the individual setups. The second part of the talk will deal with examples of applications of home- laboratory GIIXRD and GIWAXS measurements for characterization of thin films of organic semiconductors. In particular, the following experiments and results will be featured: (i) A demonstration of possibility to characterize molecular monolayer of a small molecule organic semiconductor using home-laboratory source and a comparison GIIXRD performance while using laboratory and synchrotron source, respectively. (ii) In-situ observation of annealing induced phase transfor- mations using GIWAXS.

Návaznosti

• GA22-04551S, projekt VaV: Název: Růst organických polovodičů na grafenu: od vzniku první monovrstvy k molekulárním multivrstvám (Akronym: GOSG)

Investor: Grantová agentura ČR, Growth of organic semiconductors on graphene: from the first monolayer formation to molecular multilayers