| MEDUŇA, Mojmír, Fabio ISA, Franco BRESSAN a von Känel HANS. The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals. Journal of Applied Crystallography. International Union of Crystallography, 2022, roč. 55, August, s. 823-836. ISSN 1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576722004885. |
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@article{2243549,
author = {Meduňa, Mojmír and Isa, Fabio and Bressan, Franco and Hans, von Känel},
article_number = {August},
doi = {http://dx.doi.org/10.1107/S1600576722004885},
keywords = {Radon transform; X-ray diffraction; patterned Si substrates; Ge microcrystals; reciprocal-space mapping},
language = {eng},
issn = {1600-5767},
journal = {Journal of Applied Crystallography},
title = {The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals},
url = {https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576722004885},
volume = {55},
year = {2022}
}
TY - JOUR
ID - 2243549
AU - Meduňa, Mojmír - Isa, Fabio - Bressan, Franco - Hans, von Känel
PY - 2022
TI - The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals
JF - Journal of Applied Crystallography
VL - 55
IS - August
SP - 823-836
EP - 823-836
PB - International Union of Crystallography
SN - 16005767
KW - Radon transform
KW - X-ray diffraction
KW - patterned Si substrates
KW - Ge microcrystals
KW - reciprocal-space mapping
UR - https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576722004885
N2 - This work presents a new approach suitable for mapping reciprocal space in three dimensions with standard laboratory equipment and a typical X-ray diffraction setup. The method is based on symmetric and coplanar high-resolution X-ray diffraction, ideally realized using 2D X-ray pixel detectors. The processing of experimental data exploits the Radon transform commonly used in medical and materials science. It is shown that this technique can also be used for diffraction mapping in reciprocal space even if a highly collimated beam is not available. The application of the method is demonstrated for various types of epitaxial microcrystals on Si substrates. These comprise partially fused SiGe microcrystals that are tens of micrometres high, multiple-quantum-well structures grown on SiGe microcrystals and pyramid-shaped GaAs/Ge microcrystals on top of Si micropillars.
ER -
MEDUŇA, Mojmír, Fabio ISA, Franco BRESSAN a von Känel HANS. The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals. \textit{Journal of Applied Crystallography}. International Union of Crystallography, 2022, roč.~55, August, s.~823-836. ISSN~1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576722004885.
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