ROY, Rajarshi, David HOLEC, Markus KRATZER, Philipp MUENZER, Preeti KAUSHIK, Lukáš MICHAL, Gundam Sandeep KUMAR, Lenka ZAJÍČKOVÁ a Christian TEICHERT. Probing the charge transfer and electron-hole asymmetry in graphene-graphene quantum dot heterostructure. Nanotechnology. IOP Publishing Ltd., 2022, roč. 33, č. 32, s. 1-9. ISSN 0957-4484. Dostupné z: https://dx.doi.org/10.1088/1361-6528/ac6c38.
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Základní údaje
Originální název Probing the charge transfer and electron-hole asymmetry in graphene-graphene quantum dot heterostructure
Autoři ROY, Rajarshi (356 Indie, domácí), David HOLEC (203 Česká republika), Markus KRATZER, Philipp MUENZER, Preeti KAUSHIK (356 Indie, domácí), Lukáš MICHAL (203 Česká republika, domácí), Gundam Sandeep KUMAR, Lenka ZAJÍČKOVÁ (203 Česká republika, garant, domácí) a Christian TEICHERT.
Vydání Nanotechnology, IOP Publishing Ltd. 2022, 0957-4484.
Další údaje
Originální jazyk angličtina
Typ výsledku Článek v odborném periodiku
Obor 10305 Fluids and plasma physics
Stát vydavatele Spojené státy
Utajení není předmětem státního či obchodního tajemství
WWW URL
Impakt faktor Impact factor: 3.500
Kód RIV RIV/00216224:14310/22:00128664
Organizační jednotka Přírodovědecká fakulta
Doi http://dx.doi.org/10.1088/1361-6528/ac6c38
UT WoS 000798066500001
Klíčová slova anglicky graphene; graphene quantum dots; scanning probe microscopy; charge transfer; ab initio
Štítky rivok
Příznaky Mezinárodní význam, Recenzováno
Změnil Změnila: Mgr. Marie Šípková, DiS., učo 437722. Změněno: 3. 4. 2023 12:18.
Anotace
In recent years, graphene-based van der Waals (vdW) heterostructures have come into prominence showcasing interesting charge transfer dynamics which is significant for optoelectronic applications. These novel structures are highly tunable depending on several factors such as the combination of the two-dimensional materials, the number of layers and band alignment exhibiting interfacial charge transfer dynamics. Here, we report on a novel graphene based 0D-2D vdW heterostructure between graphene and amine-functionalized graphene quantum dots (GQD) to investigate the interfacial charge transfer and doping possibilities. Using a combination of ab initio simulations and Kelvin probe force microscopy (KPFM) measurements, we confirm that the incorporation of functional GQDs leads to a charge transfer induced p-type doping in graphene. A shift of the Dirac point by 0.05 eV with respect to the Fermi level (E (F)) in the graphene from the heterostructure was deduced from the calculated density of states. KPFM measurements revealed an increment in the surface potential of the GQD in the 0D-2D heterostructure by 29 mV with respect to graphene. Furthermore, we conducted power dependent Raman spectroscopy for both graphene and the heterostructure samples. An optical doping-induced gating effect resulted in a stiffening of the G band for electrons and holes in both samples (graphene and the heterostructure), suggesting a breakdown of the adiabatic Born-Oppenheimer approximation. Moreover, charge imbalance and renormalization of the electron-hole dispersion under the additional influence of the doped functional GQDs is pointing to an asymmetry in conduction and carrier mobility.
Návaznosti
EF18_070/0009846, projekt VaVNázev: MSCAfellow2@MUNI
90110, velká výzkumná infrastrukturaNázev: CzechNanoLab
VytisknoutZobrazeno: 27. 4. 2024 21:41