V-pits formation in InGaN/GaN: influence of threading
dislocations and indium content

J 2022

V-pits formation in InGaN/GaN: influence of threading dislocations and indium content

STRÁNSKÁ MATĚJOVÁ, Jana; Alice HOSPODKOVÁ; Tereza KOŠUTOVÁ; Tomáš HUBÁČEK; Matěj HÝVL et. al.

Základní údaje

Originální název

V-pits formation in InGaN/GaN: influence of threading dislocations and indium content

Autoři

STRÁNSKÁ MATĚJOVÁ, Jana; Alice HOSPODKOVÁ; Tereza KOŠUTOVÁ; Tomáš HUBÁČEK; Matěj HÝVL a Václav HOLÝ

Vydání

Journal of Physics D: Applied Physics, Bristol, England, IOP Publishing Ltd. 2022, 0022-3727

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10301 Atomic, molecular and chemical physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.400

Kód RIV

RIV/00216224:14310/22:00128729

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1088/1361-6463/ac5c1a

UT WoS

000778222800001

EID Scopus

2-s2.0-85128130915

Klíčová slova anglicky

V-pits; InGaN; GaN; dislocations; x-ray diffraction; diffuse scattering; XRD; RSM

Štítky

14312020, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 28. 2. 2023 08:50, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density.

Citovat

STRÁNSKÁ MATĚJOVÁ, Jana; Alice HOSPODKOVÁ; Tereza KOŠUTOVÁ; Tomáš HUBÁČEK; Matěj HÝVL a Václav HOLÝ. V-pits formation in InGaN/GaN: influence of threading dislocations and indium content. Journal of Physics D: Applied Physics. Bristol, England: IOP Publishing Ltd., 2022, roč. 55, č. 25, s. 1-15. ISSN 0022-3727. Dostupné z: https://doi.org/10.1088/1361-6463/ac5c1a.

@article{2261900,
   author = {Stránská Matějová, Jana and Hospodková, Alice and Košutová, Tereza and Hubáček, Tomáš and Hývl, Matěj and Holý, Václav},
   article_location = {Bristol, England},
   article_number = {25},
   doi = {https://doi.org/10.1088/1361-6463/ac5c1a},
   keywords = {V-pits; InGaN; GaN; dislocations; x-ray diffraction; diffuse scattering; XRD; RSM},
   language = {eng},
   issn = {0022-3727},
   journal = {Journal of Physics D: Applied Physics},
   title = {V-pits formation in InGaN/GaN: influence of threading dislocations and indium content},
   url = {https://iopscience.iop.org/article/10.1088/1361-6463/ac5c1a},
   volume = {55},
   year = {2022}
}

TY  - JOUR
ID  - 2261900
AU  - Stránská Matějová, Jana - Hospodková, Alice - Košutová, Tereza - Hubáček, Tomáš - Hývl, Matěj - Holý, Václav
PY  - 2022
TI  - V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
JF  - Journal of Physics D: Applied Physics
VL  - 55
IS  - 25
SP  - 1-15
EP  - 1-15
PB  - IOP Publishing Ltd.
SN  - 00223727
KW  - V-pits
KW  - InGaN
KW  - GaN
KW  - dislocations
KW  - x-ray diffraction
KW  - diffuse scattering
KW  - XRD
KW  - RSM
UR  - https://iopscience.iop.org/article/10.1088/1361-6463/ac5c1a
N2  - Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density.
ER  -

STRÁNSKÁ MATĚJOVÁ, Jana; Alice HOSPODKOVÁ; Tereza KOŠUTOVÁ; Tomáš HUBÁČEK; Matěj HÝVL a Václav HOLÝ. V-pits formation in InGaN/GaN: influence of threading dislocations and indium content. \textit{Journal of Physics D: Applied Physics}. Bristol, England: IOP Publishing Ltd., 2022, roč.~55, č.~25, s.~1-15. ISSN~0022-3727. Dostupné z: https://doi.org/10.1088/1361-6463/ac5c1a.

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