GaAs quantum dots under quasiuniaxial stress: Experiment and
theory

J 2023

GaAs quantum dots under quasiuniaxial stress: Experiment and theory

YUAN, Xueyong; Saimon F. Covre da SILVA; Diana CSONTOSOVÁ; Huiying HUANG; Christian SCHIMPF et al.

Základní údaje

Originální název

GaAs quantum dots under quasiuniaxial stress: Experiment and theory

Autoři

YUAN, Xueyong; Saimon F. Covre da SILVA; Diana CSONTOSOVÁ; Huiying HUANG; Christian SCHIMPF; Marcus REINDL; Junpeng LU; Zhenhua NI; Armando RASTELLI a Petr KLENOVSKÝ

Vydání

Physical Review B, American Physical Society, 2023, 2469-9950

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.200

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/23:00130993

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Elasticity; Electronic structure; Excitons; Fermions; Lifetimes and widths; Luminescence; Nonlocality; Quantum cryptography; Stress

Štítky

14312020, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 19. 3. 2024 14:48, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k⋅p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.

Návaznosti

8C18001, projekt VaV

Název: CMOS Compatible Single Photon Sources based on SiGe Quantum Dots (Akronym: CUSPIDOR)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CMOS Compatible Single Photon Sources based on SiGe Quantum Dots, QUANTERA: Kvantové informační a komunikační vědy a technologie

Citovat

YUAN, Xueyong; Saimon F. Covre da SILVA; Diana CSONTOSOVÁ; Huiying HUANG; Christian SCHIMPF; Marcus REINDL; Junpeng LU; Zhenhua NI; Armando RASTELLI a Petr KLENOVSKÝ. GaAs quantum dots under quasiuniaxial stress: Experiment and theory. Physical Review B. American Physical Society, 2023, roč. 107, č. 23, s. "235412-1"-"235412-12", 12 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.107.235412.

@article{2292538,
   author = {Yuan, Xueyong and Silva, Saimon F. Covre da and Csontosová, Diana and Huang, Huiying and Schimpf, Christian and Reindl, Marcus and Lu, Junpeng and Ni, Zhenhua and Rastelli, Armando and Klenovský, Petr},
   article_number = {23},
   doi = {https://doi.org/10.1103/PhysRevB.107.235412},
   keywords = {Elasticity; Electronic structure; Excitons; Fermions; Lifetimes and widths; Luminescence; Nonlocality; Quantum cryptography; Stress},
   language = {eng},
   issn = {2469-9950},
   journal = {Physical Review B},
   title = {GaAs quantum dots under quasiuniaxial stress: Experiment and theory},
   url = {https://doi.org/10.1103/PhysRevB.107.235412},
   volume = {107},
   year = {2023}
}

TY  - JOUR
ID  - 2292538
AU  - Yuan, Xueyong - Silva, Saimon F. Covre da - Csontosová, Diana - Huang, Huiying - Schimpf, Christian - Reindl, Marcus - Lu, Junpeng - Ni, Zhenhua - Rastelli, Armando - Klenovský, Petr
PY  - 2023
TI  - GaAs quantum dots under quasiuniaxial stress: Experiment and theory
JF  - Physical Review B
VL  - 107
IS  - 23
SP  - "235412-1"-"235412-12"
EP  - "235412-1"-"235412-12"
PB  - American Physical Society
SN  - 24699950
KW  - Elasticity
KW  - Electronic structure
KW  - Excitons
KW  - Fermions
KW  - Lifetimes and widths
KW  - Luminescence
KW  - Nonlocality
KW  - Quantum cryptography
KW  - Stress
UR  - https://doi.org/10.1103/PhysRevB.107.235412
N2  - The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k⋅p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.
ER  -

YUAN, Xueyong; Saimon F. Covre da SILVA; Diana CSONTOSOVÁ; Huiying HUANG; Christian SCHIMPF; Marcus REINDL; Junpeng LU; Zhenhua NI; Armando RASTELLI a Petr KLENOVSKÝ. GaAs quantum dots under quasiuniaxial stress: Experiment and theory. \textit{Physical Review B}. American Physical Society, 2023, roč.~107, č.~23, s.~''235412-1''-''235412-12'', 12 s. ISSN~2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.107.235412.

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